SK3356 - Аналоги. Основные параметры
Наименование производителя: SK3356
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.2
W
Макcимально допустимое напряжение коллектор-база (Ucb): 30
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 4
V
Макcимальный постоянный ток коллектора (Ic): 0.03
A
Предельная температура PN-перехода (Tj): 200
°C
Граничная частота коэффициента передачи тока (ft): 100
MHz
Ёмкость коллекторного перехода (Cc): 100
pf
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора:
TO92
Аналоги (замена) для SK3356
-
подбор ⓘ биполярного транзистора по параметрам
SK3356 - технические параметры
9.1. Size:38K 1
2sk3352.pdf 

Ordering number ENN8125 2SK3352 N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3352 Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. DC / DC converter applications. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS
9.2. Size:214K renesas
2sk3355.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.3. Size:214K renesas
2sk3355-s-z-zj.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.4. Size:260K renesas
2sk3357.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.5. Size:214K renesas
2sk3354-s-z-zj.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.6. Size:42K nec
2sk3354.pdf 

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3354 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3354 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SK3354 TO-220AB 2SK3354-S TO-262 FEATURES 2SK3354-Z TO-220SMD Super low on-state resistance RDS(on)1 = 8.0 m MAX. (VGS =
9.7. Size:39K nec
2sk3353-s-z.pdf 

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3353 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3353 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SK3353 TO-220AB 2SK3353-S TO-262 FEATURES 2SK3353-Z TO-220SMD Super low on-state resistance RDS(on)1 = 9.5 m MAX. (VGS
9.8. Size:289K inchange semiconductor
2sk3355.pdf 

isc N-Channel MOSFET Transistor 2SK3355 FEATURES Drain Current I = 82A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 5.8m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi
9.9. Size:357K inchange semiconductor
2sk3353-z.pdf 

isc N-Channel MOSFET Transistor 2SK3353-Z FEATURES Drain Current I = 82A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 9.5m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
9.10. Size:356K inchange semiconductor
2sk3352b.pdf 

isc P-Channel MOSFET Transistor 2SK3352B FEATURES Drain Current I = 45A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 15m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d
9.11. Size:357K inchange semiconductor
2sk3354-z.pdf 

isc N-Channel MOSFET Transistor 2SK3354-Z FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 8m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d
9.12. Size:283K inchange semiconductor
2sk3355-s.pdf 

isc N-Channel MOSFET Transistor 2SK3355-S FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 5.8m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
9.13. Size:357K inchange semiconductor
2sk3355-zj.pdf 

isc N-Channel MOSFET Transistor 2SK3355-ZJ FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 5.8m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi
9.14. Size:289K inchange semiconductor
2sk3354.pdf 

isc N-Channel MOSFET Transistor 2SK3354 FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 8.0m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi
9.15. Size:287K inchange semiconductor
2sk3357.pdf 

isc N-Channel MOSFET Transistor 2SK3357 FEATURES Drain Current I = 75A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 5.8m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi
9.16. Size:283K inchange semiconductor
2sk3353-s.pdf 

isc N-Channel MOSFET Transistor 2SK3353-S FEATURES Drain Current I = 82A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 9.5m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
9.17. Size:283K inchange semiconductor
2sk3354-s.pdf 

isc N-Channel MOSFET Transistor 2SK3354-S FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 8m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d
9.18. Size:357K inchange semiconductor
2sk3355-z.pdf 

isc N-Channel MOSFET Transistor 2SK3355-Z FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 5.8m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
9.19. Size:340K inchange semiconductor
2sk3352k.pdf 

isc P-Channel MOSFET Transistor 2SK3352K FEATURES Drain Current I = 45A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 15m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d
9.20. Size:289K inchange semiconductor
2sk3353.pdf 

isc N-Channel MOSFET Transistor 2SK3353 FEATURES Drain Current I = 82A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 9.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi
Другие транзисторы... SK3114
, SK3137
, SK3182
, SK3194
, SK3218
, SK3247
, SK3260
, SK3270
, BD140
, SK3441
, SK3511
, SK3538
, SK3623
, SK5801
, SK6346
, SM1258
, SM1259
.