SK3356 Specs and Replacement
Type Designator: SK3356
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 100 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO92
- BJT ⓘ Cross-Reference Search
SK3356 datasheet
9.1. Size:38K 1
2sk3352.pdf 
Ordering number ENN8125 2SK3352 N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3352 Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. DC / DC converter applications. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ... See More ⇒
9.2. Size:214K renesas
2sk3355.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
9.3. Size:214K renesas
2sk3355-s-z-zj.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
9.4. Size:260K renesas
2sk3357.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
9.5. Size:214K renesas
2sk3354-s-z-zj.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
9.6. Size:42K nec
2sk3354.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3354 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3354 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SK3354 TO-220AB 2SK3354-S TO-262 FEATURES 2SK3354-Z TO-220SMD Super low on-state resistance RDS(on)1 = 8.0 m MAX. (VGS =... See More ⇒
9.7. Size:39K nec
2sk3353-s-z.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3353 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3353 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SK3353 TO-220AB 2SK3353-S TO-262 FEATURES 2SK3353-Z TO-220SMD Super low on-state resistance RDS(on)1 = 9.5 m MAX. (VGS ... See More ⇒
9.8. Size:289K inchange semiconductor
2sk3355.pdf
isc N-Channel MOSFET Transistor 2SK3355 FEATURES Drain Current I = 82A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 5.8m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒
9.9. Size:357K inchange semiconductor
2sk3353-z.pdf
isc N-Channel MOSFET Transistor 2SK3353-Z FEATURES Drain Current I = 82A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 9.5m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid... See More ⇒
9.10. Size:356K inchange semiconductor
2sk3352b.pdf
isc P-Channel MOSFET Transistor 2SK3352B FEATURES Drain Current I = 45A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 15m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d... See More ⇒
9.11. Size:357K inchange semiconductor
2sk3354-z.pdf
isc N-Channel MOSFET Transistor 2SK3354-Z FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 8m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d... See More ⇒
9.12. Size:283K inchange semiconductor
2sk3355-s.pdf
isc N-Channel MOSFET Transistor 2SK3355-S FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 5.8m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid... See More ⇒
9.13. Size:357K inchange semiconductor
2sk3355-zj.pdf
isc N-Channel MOSFET Transistor 2SK3355-ZJ FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 5.8m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒
9.14. Size:289K inchange semiconductor
2sk3354.pdf
isc N-Channel MOSFET Transistor 2SK3354 FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 8.0m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒
9.15. Size:287K inchange semiconductor
2sk3357.pdf
isc N-Channel MOSFET Transistor 2SK3357 FEATURES Drain Current I = 75A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 5.8m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒
9.16. Size:283K inchange semiconductor
2sk3353-s.pdf
isc N-Channel MOSFET Transistor 2SK3353-S FEATURES Drain Current I = 82A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 9.5m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid... See More ⇒
9.17. Size:283K inchange semiconductor
2sk3354-s.pdf
isc N-Channel MOSFET Transistor 2SK3354-S FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 8m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d... See More ⇒
9.18. Size:357K inchange semiconductor
2sk3355-z.pdf
isc N-Channel MOSFET Transistor 2SK3355-Z FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 5.8m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid... See More ⇒
9.19. Size:340K inchange semiconductor
2sk3352k.pdf
isc P-Channel MOSFET Transistor 2SK3352K FEATURES Drain Current I = 45A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 15m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d... See More ⇒
9.20. Size:289K inchange semiconductor
2sk3353.pdf
isc N-Channel MOSFET Transistor 2SK3353 FEATURES Drain Current I = 82A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 9.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒
Detailed specifications: SK3114, SK3137, SK3182, SK3194, SK3218, SK3247, SK3260, SK3270, BD140, SK3441, SK3511, SK3538, SK3623, SK5801, SK6346, SM1258, SM1259
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