ST12 - описание и поиск аналогов

DISCRETE SEMICONDUCTORS DATA SHEET BST120 P-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification P-channel enhancement mode vertical BST120 D-MOS transistor DESCRIPTION QUICK REFERENCE DATA P-channel vertical D-MOS transistor Drain-source voltage -VDS max. 60 V i

DISCRETE SEMICONDUCTORS DATA SHEET BST122 P-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification P-channel enhancement mode vertical BST122 D-MOS transistor DESCRIPTION QUICK REFERENCE DATA P-channel vertical D-MOS transistor Drain-source voltage -VDS max. 60 V i

OST120N65H4SMF Enhancement Mode N-Channel Power IGBT General Description OST120N65H4SMF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM tec

OST120N65H5SMF Enhancement Mode N-Channel Power IGBT General Description OST120N65H5SMF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM tec

OST120N65HEMF Enhancement Mode N-Channel Power IGBT General Description OST120N65HEMF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM techn

OST120N65H4UMF Enhancement Mode N-Channel Power IGBT General Description OST120N65H4UMF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM tec

ECO-PACTM 1 Powerline N-Channel PSTG 50HST12 Trench Gate- VCES = 1200 V IGBT Module VCE(sat) = 1.9 V IC25 = 72 A IC75 = 50 A ICM = 150 A Preliminary Data Sheet tSC = 10 s I N H M B G A Features Symbol Test Conditions Maximum Ratings TVJ = 25 C to 150 C 1200 V VCES Package with DCB ceramic base continous V VGES 20 plate and soldering pins for PCB

ECO-PACTM 1 Powerline N-Channel PSTG 75HST12 Trench Gate- VCES = 1200 V IGBT Module VCE(sat) = 1.9 V IC25 = 109 A IC75 = 75 A ICM = 225 A Preliminary Data Sheet tSC = 10 s I L N H J M B E G A Features Symbol Test Conditions Maximum Ratings TVJ = 25 C to 150 C 1200 V VCES Package with DCB ceramic base continous V VGES 20 plate and soldering p

ST12N10D N Channel Enhancement Mode MOSFET 12.0A DESCRIPTION ST12N10D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The ST12N10D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been

ST12N10D www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 100 0.11 4 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS