Биполярный транзистор TA1945
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: TA1945
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.33
W
Макcимально допустимое напряжение коллектор-база (Ucb): 80
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60
V
Макcимальный постоянный ток коллектора (Ic): 0.1
A
Предельная температура PN-перехода (Tj): 140
°C
Ёмкость коллекторного перехода (Cc): 4
pf
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора: TO98-2
Аналоги (замена) для TA1945
TA1945
Datasheet (PDF)
9.1. Size:188K st
2sta1943.pdf 
2STA1943High power PNP epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO > -230V Complementary to 2STC5200 Fast-switching speed Typical fT = 30 MHzApplication321 Audio power amplifierTO-264DescriptionThis device is a NPN transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology. The resultin
9.2. Size:191K toshiba
tta1943.pdf 
TTA1943 TOSHIBA Transistor Silicon PNP Epitaxial Type TTA1943 Power Amplifier Applications Unit: mm High collector voltage: VCEO = -230 V (min) Complementary to TTC5200 Recommended for 100-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -230 VCollector-
9.3. Size:77K kec
kta1940.pdf 
SEMICONDUCTOR KTA1940TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTORHIGH POWER AMPLIFIER APPLICATION. A Q BKFEATURES Recommended for 55W Audio Frequency Amplifier Output Stage.DIM MILLIMETERS Complementary to KTC5197.A 15.9 MAXB 4.8 MAX_C 20.0 + 0.3_D 2.0 + 0.3Dd 1.0+0.3/-0.25E 2.0F 1.0MAXIMUM RATING (Ta=25 )G 3.3 MAXdH 9.0CHARACTERISTIC SYMBOL RAT
9.4. Size:372K first silicon
fta1943.pdf 
SEMICONDUCTORFTA1943TECHNICAL DATAPurpose: Power amplifier applications. Features: Recommend for 100W high fidelity audio frequencyamplifier output stage,Complementary to FTC5200. Absolute maximum ratings(Ta=25) Rating Symbol Unit V -230 V CBO V -230 V CEO V -5 V EBO I -15 A C I -30 A CPI -1.5 A BP 150 W C(TC=25)T 150 j T -55150
9.5. Size:1600K cn evvo
tta1943.pdf 
TTA1943Silicon PNP transistorPower Amplifier Applications Complementary to TTC5200 High collector voltage:VCEO=-230V (min) Recommended for 100-W high-fidelity audio frequency amplifierOutput stageNote: Using continuously under heavy loads (e.g. the applicationof high temperature/current/voltage and the significant changein temperature, etc.) may cause this product to
9.6. Size:187K inchange semiconductor
tta1943.pdf 
INCHANGE Semiconductorisc Silicon PNP Power Transistor TTA1943DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = -230V(Min)(BR)CEOComplement to Type TTC5200Minimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSPower amplifier applicationsRecommended for 100W high fidelity audio frequency amplifieroutput stageABSO
Другие транзисторы... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.
