Биполярный транзистор TIP137 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: TIP137
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 70 W
Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 8 A
Предельная температура PN-перехода (Tj): 150 °C
Ёмкость коллекторного перехода (Cc): 200 pf
Статический коэффициент передачи тока (hfe): 1000
Корпус транзистора: TO220
TIP137 Datasheet (PDF)
tip131 tip132 tip135 tip137.pdf
TIP131/TIP132TIP135/TIP137 COMPLEMENTARY SILICON POWERDARLINGTON TRANSISTORS TIP131, TIP132, TIP135 AND TIP137 ARESGS-THOMSON PREFERRED SALESTYPESAPPLICATION LINEAR AND SWITCHING INDUSTRIALEQUIPMENT321DESCRIPTIONThe TIP131 and TIP132 are silicon epitaxial-base TO-220NPN power transistors in monolithic Darlingtonconfiguration, mounted in Jedec TO-220 plasticp
tip130 tip131 tip132 tip135 tip136 tip137.pdf
TIP130/131/132TIP135/136/137COMPLEMENTARY SILICON POWERDARLINGTON TRANSISTORSn TIP131, TIP132, TIP135 AND TIP137 ARESGS-THOMSON PREFERRED SALESTYPESDESCRIPTIONThe TIP130, TIP131 and TIP132 are siliconepitaxial-base NPN power transistors inmonolithic Darlington configuration, mounted inJedec TO-220 plastic package. They are intentedfor use in power linear and switching appl
tip137.pdf
isc Silicon PNP Darlington Power Transistor TIP137DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = -4AFE CCollector-Emitter Sustaining Voltage-: V = -100V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = -2.0V(Max)@ I = -4ACE(sat) CComplement to Type TIP132Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICA
tip130-137.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPLASTIC POWER TRANSISTORS TIP130 TIP135TIP131 TIP136TIP132 TIP137NPN PNPTO-220Plastic PackageIntended for use in Linear and Switching ApplicationsABSOLUTE MAXIMUM RATINGS (Ta=25C)DESCRIPTION SYMBOL TIP130/135 TIP131/136 TIP132/137 UNITVCEO Collector Emitter Voltage 60 80 100 VCol
tip130.pdf
isc Silicon NPN Darlington Power Transistor TIP130DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 4AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 2.0V(Max)@ I = 4ACE(sat) CComplement to Type TIP135Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS
tip132.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor TIP132 DESCRIPTION High DC Current Gain- : hFE = 1000(Min)@ IC= 4A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.0V(Max)@ IC= 4A Complement to Type TIP137 APPLICATIONS Designed for general-purpose
tip135.pdf
isc Silicon PNP Darlington Power Transistor TIP135DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = -4AFE CCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = -2.0V(Max)@ I = -4ACE(sat) CComplement to Type TIP130Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICAT
tip131.pdf
isc Silicon NPN Darlington Power Transistor TIP131DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 4AFE CCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 2.0V(Max)@ I = 4ACE(sat) CComplement to Type TIP136Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS
tip136.pdf
isc Silicon PNP Darlington Power Transistor TIP136DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = -4AFE CCollector-Emitter Sustaining Voltage-: V = -80V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = -2.0V(Max)@ I = -4ACE(sat) CComplement to Type TIP131Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICAT
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050