All Transistors. TIP137 Datasheet

 

TIP137 Datasheet, Equivalent, Cross Reference Search


   Type Designator: TIP137
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 70 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 200 pF
   Forward Current Transfer Ratio (hFE), MIN: 1000
   Noise Figure, dB: -
   Package: TO220

 TIP137 Transistor Equivalent Substitute - Cross-Reference Search

   

TIP137 Datasheet (PDF)

 ..1. Size:39K  st
tip131 tip132 tip135 tip137.pdf

TIP137
TIP137

TIP131/TIP132TIP135/TIP137 COMPLEMENTARY SILICON POWERDARLINGTON TRANSISTORS TIP131, TIP132, TIP135 AND TIP137 ARESGS-THOMSON PREFERRED SALESTYPESAPPLICATION LINEAR AND SWITCHING INDUSTRIALEQUIPMENT321DESCRIPTIONThe TIP131 and TIP132 are silicon epitaxial-base TO-220NPN power transistors in monolithic Darlingtonconfiguration, mounted in Jedec TO-220 plasticp

 ..2. Size:38K  st
tip130 tip131 tip132 tip135 tip136 tip137.pdf

TIP137
TIP137

TIP130/131/132TIP135/136/137COMPLEMENTARY SILICON POWERDARLINGTON TRANSISTORSn TIP131, TIP132, TIP135 AND TIP137 ARESGS-THOMSON PREFERRED SALESTYPESDESCRIPTIONThe TIP130, TIP131 and TIP132 are siliconepitaxial-base NPN power transistors inmonolithic Darlington configuration, mounted inJedec TO-220 plastic package. They are intentedfor use in power linear and switching appl

 ..3. Size:212K  inchange semiconductor
tip137.pdf

TIP137
TIP137

isc Silicon PNP Darlington Power Transistor TIP137DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = -4AFE CCollector-Emitter Sustaining Voltage-: V = -100V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = -2.0V(Max)@ I = -4ACE(sat) CComplement to Type TIP132Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICA

 9.1. Size:150K  mospec
tip130-32 tip135-37.pdf

TIP137
TIP137

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 9.2. Size:327K  cdil
tip130-137.pdf

TIP137
TIP137

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPLASTIC POWER TRANSISTORS TIP130 TIP135TIP131 TIP136TIP132 TIP137NPN PNPTO-220Plastic PackageIntended for use in Linear and Switching ApplicationsABSOLUTE MAXIMUM RATINGS (Ta=25C)DESCRIPTION SYMBOL TIP130/135 TIP131/136 TIP132/137 UNITVCEO Collector Emitter Voltage 60 80 100 VCol

 9.3. Size:212K  inchange semiconductor
tip130.pdf

TIP137
TIP137

isc Silicon NPN Darlington Power Transistor TIP130DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 4AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 2.0V(Max)@ I = 4ACE(sat) CComplement to Type TIP135Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS

 9.4. Size:133K  inchange semiconductor
tip132.pdf

TIP137
TIP137

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor TIP132 DESCRIPTION High DC Current Gain- : hFE = 1000(Min)@ IC= 4A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.0V(Max)@ IC= 4A Complement to Type TIP137 APPLICATIONS Designed for general-purpose

 9.5. Size:212K  inchange semiconductor
tip135.pdf

TIP137
TIP137

isc Silicon PNP Darlington Power Transistor TIP135DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = -4AFE CCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = -2.0V(Max)@ I = -4ACE(sat) CComplement to Type TIP130Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICAT

 9.6. Size:212K  inchange semiconductor
tip131.pdf

TIP137
TIP137

isc Silicon NPN Darlington Power Transistor TIP131DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 4AFE CCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 2.0V(Max)@ I = 4ACE(sat) CComplement to Type TIP136Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS

 9.7. Size:212K  inchange semiconductor
tip136.pdf

TIP137
TIP137

isc Silicon PNP Darlington Power Transistor TIP136DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = -4AFE CCollector-Emitter Sustaining Voltage-: V = -80V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = -2.0V(Max)@ I = -4ACE(sat) CComplement to Type TIP131Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICAT

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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