Биполярный транзистор TIP141F
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: TIP141F
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 60
W
Макcимально допустимое напряжение коллектор-база (Ucb): 80
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V
Макcимальный постоянный ток коллектора (Ic): 10
A
Предельная температура PN-перехода (Tj): 150
°C
Статический коэффициент передачи тока (hfe): 500
Корпус транзистора:
ISOWATT218
Аналоги (замена) для TIP141F
TIP141F
Datasheet (PDF)
..1. Size:223K inchange semiconductor
tip141f.pdf 
isc Silicon NPN Darlington Power Transistor TIP141FDESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 5AFE CCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Complement to Type TIP146FMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and lowfrequency switching applica
8.1. Size:68K st
tip140 tip141 tip142 tip145 tip146 tip147.pdf 
TIP140/141/142TIP145/146/147COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS TIP141, TIP142, TIP145 AND TIP147 ARESGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTONCONFIGURATION INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE 3APPLICATIONS 2 LINEAR AND SWITCHING INDUSTRIAL1EQUIPMENT TO-218DESCRIPTION The TIP140, TIP141
8.2. Size:48K st
tip140 tip141 tip142 tip145 tip146 tip147 .pdf 
TIP140/141/142TIP145/146/147COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS TIP141, TIP142, TIP145 AND TIP147 ARESTMicroelectronics PREFERREDSALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTONCONFIGURATION INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE 32APPLICATIONS 1 LINEAR AND SWITCHING INDUSTRIALEQUIPMENT TO-218DESCRIPTION The TI
8.3. Size:38K st
tip141.pdf 
TIP141/142TIP146/147COMPLEMENTARY SILICON POWERDARLINGTON TRANSISTORSn SGS-THOMSON PREFERRED SALESTYPESDESCRIPTIONThe TIP141and TIP142 are silicon epitaxial-baseNPN power transistors in monolithic Darlingtonconfiguration and are mounted in TO-218 plasticpackage. They are intented for use in powerlinear and switching applications.3The complementary PNP types are TIP146 an
8.4. Size:223K inchange semiconductor
tip141.pdf 
isc Silicon NPN Darlington Power Transistor TIP141DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 5AFE CCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Complement to Type TIP146Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and lowfrequency switching applicati
8.5. Size:215K inchange semiconductor
tip141t.pdf 
isc Silicon NPN Darlington Power Transistor TIP141TDESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 5AFE CCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Complement to Type TIP146TMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and low speedswitching application
Другие транзисторы... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.
