TIP141F
Datasheet, Equivalent, Cross Reference Search
Type Designator: TIP141F
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 60
W
Maximum Collector-Base Voltage |Vcb|: 80
V
Maximum Collector-Emitter Voltage |Vce|: 80
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 10
A
Max. Operating Junction Temperature (Tj): 150
°C
Forward Current Transfer Ratio (hFE), MIN: 500
Noise Figure, dB: -
Package:
ISOWATT218
TIP141F
Transistor Equivalent Substitute - Cross-Reference Search
TIP141F
Datasheet (PDF)
..1. Size:223K inchange semiconductor
tip141f.pdf
isc Silicon NPN Darlington Power Transistor TIP141FDESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 5AFE CCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Complement to Type TIP146FMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and lowfrequency switching applica
8.1. Size:68K st
tip140 tip141 tip142 tip145 tip146 tip147.pdf
TIP140/141/142TIP145/146/147COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS TIP141, TIP142, TIP145 AND TIP147 ARESGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTONCONFIGURATION INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE 3APPLICATIONS 2 LINEAR AND SWITCHING INDUSTRIAL1EQUIPMENT TO-218DESCRIPTION The TIP140, TIP141
8.2. Size:48K st
tip140 tip141 tip142 tip145 tip146 tip147 .pdf
TIP140/141/142TIP145/146/147COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS TIP141, TIP142, TIP145 AND TIP147 ARESTMicroelectronics PREFERREDSALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTONCONFIGURATION INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE 32APPLICATIONS 1 LINEAR AND SWITCHING INDUSTRIALEQUIPMENT TO-218DESCRIPTION The TI
8.3. Size:38K st
tip141.pdf
TIP141/142TIP146/147COMPLEMENTARY SILICON POWERDARLINGTON TRANSISTORSn SGS-THOMSON PREFERRED SALESTYPESDESCRIPTIONThe TIP141and TIP142 are silicon epitaxial-baseNPN power transistors in monolithic Darlingtonconfiguration and are mounted in TO-218 plasticpackage. They are intented for use in powerlinear and switching applications.3The complementary PNP types are TIP146 an
8.4. Size:223K inchange semiconductor
tip141.pdf
isc Silicon NPN Darlington Power Transistor TIP141DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 5AFE CCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Complement to Type TIP146Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and lowfrequency switching applicati
8.5. Size:215K inchange semiconductor
tip141t.pdf
isc Silicon NPN Darlington Power Transistor TIP141TDESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 5AFE CCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Complement to Type TIP146TMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and low speedswitching application
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