TIP140/141/142TIP145/146/147COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS TIP141, TIP142, TIP145 AND TIP147 ARESGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTONCONFIGURATION INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE 3APPLICATIONS 2 LINEAR AND SWITCHING INDUSTRIAL1EQUIPMENT TO-218DESCRIPTION The TIP140, TIP141

TIP140/141/142TIP145/146/147COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS TIP141, TIP142, TIP145 AND TIP147 ARESTMicroelectronics PREFERREDSALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTONCONFIGURATION INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE 32APPLICATIONS 1 LINEAR AND SWITCHING INDUSTRIALEQUIPMENT TO-218DESCRIPTION The TI

DARLINGTON COMPLEMENTARY POWER TRANSISTORS RTIP142/TIP147 APPLICATIONS Engine ignition High frequency switching power supply High frequency power transform ly power amplifier circuit FEATURES

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor TIP142 DESCRIPTION High DC Current Gain- : hFE = 1000(Min)@ IC= 5A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) Complement to Type TIP147 APPLICATIONS Designed for general purpose amplifier and low frequency switching applications. ABSOLUTE MAXIMUM RATINGS

TIP142TTIP147TCOMPLEMENTARY SILICON POWERDARLINGTON TRANSISTORS STM PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTONCONFIGURATION LOW VOLTAGE HIGH CURRENT HIGH GAINAPPLICATIONS 32 GENERAL PURPOSE SWITCHING 1DESCRIPTION TO-220The TIP142T is a silicon epitaxial-base NPNpower transistor in monolithic Darlingtonconfiguration, mo

TIP140T/141T/142TMonolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.) Industrial Use Complement to TIP145T/146T/147TTO-22011.Base 2.Collector 3.EmitterNPN Epitaxial Silicon Darlington TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedEquivalent CircuitSymbol Parameter Val

TIP140F/141F/142FMonolithic Construction With Built In Base-Emitter Shunt Resistors Complement to TIP145F/146F/147F High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.) Industrial UseTO-3PF11.Base 2.Collector 3.EmitterNPN Epitaxial Darlington TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedEquivalent CircuitCSymbol Parameter Value Uni

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySILICON PLANAR POWER DARLINGTON TRANSISTORS TIP142T NPNTIP147T PNPTO-220Plastic PackageFor use in Power Linear and Switching ApplicationsABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITCollector Base Voltage VCBO 100 VCollector Emitter Voltage VCEO 100 VEmitter Base Voltage VEBO

TIP142T(3DA142T) NPN /SILICON NPN TRANSISTOR : Purpose: Linear and switching industrial equipment. : - TIP147T(3CA147T) Features: Monolithic construction with built in base-emitter shunt resistorsHigh DC current gain complement to TIP147T(

SPTECH Product SpecificationSPTECH Silicon NPN Darlington Power Transistor TIP142TDESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 5AFE CCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)Complement to Type TIP147TAPPLICATIONSDesigned for general purpose amplifier and low speedswitching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

isc Silicon NPN Darlington Power Transistor TIP142TDESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 5AFE CCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)Complement to Type TIP147TMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and low speedswitching applicatio

isc Silicon NPN Darlington Power Transistor TIP142FDESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 5AFE CCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)Complement to Type TIP147FMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and lowfrequency switching applic