All Transistors. TIP142 Datasheet

 

TIP142 Datasheet, Equivalent, Cross Reference Search


   Type Designator: TIP142
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 125 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 500
   Noise Figure, dB: -
   Package: TO218

 TIP142 Transistor Equivalent Substitute - Cross-Reference Search

   

TIP142 Datasheet (PDF)

 ..1. Size:68K  st
tip140 tip141 tip142 tip145 tip146 tip147.pdf

TIP142 TIP142

TIP140/141/142TIP145/146/147COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS TIP141, TIP142, TIP145 AND TIP147 ARESGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTONCONFIGURATION INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE 3APPLICATIONS 2 LINEAR AND SWITCHING INDUSTRIAL1EQUIPMENT TO-218DESCRIPTION The TIP140, TIP141

 ..2. Size:48K  st
tip140 tip141 tip142 tip145 tip146 tip147 .pdf

TIP142 TIP142

TIP140/141/142TIP145/146/147COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS TIP141, TIP142, TIP145 AND TIP147 ARESTMicroelectronics PREFERREDSALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTONCONFIGURATION INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE 32APPLICATIONS 1 LINEAR AND SWITCHING INDUSTRIALEQUIPMENT TO-218DESCRIPTION The TI

 ..3. Size:164K  inchange semiconductor
tip142.pdf

TIP142 TIP142

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor TIP142 DESCRIPTION High DC Current Gain- : hFE = 1000(Min)@ IC= 5A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) Complement to Type TIP147 APPLICATIONS Designed for general purpose amplifier and low frequency switching applications. ABSOLUTE MAXIMUM RATINGS

 0.1. Size:57K  st
tip142t tip147t.pdf

TIP142 TIP142

TIP142TTIP147TCOMPLEMENTARY SILICON POWERDARLINGTON TRANSISTORS STM PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTONCONFIGURATION LOW VOLTAGE HIGH CURRENT HIGH GAINAPPLICATIONS 32 GENERAL PURPOSE SWITCHING 1DESCRIPTION TO-220The TIP142T is a silicon epitaxial-base NPNpower transistor in monolithic Darlingtonconfiguration, mo

 0.2. Size:52K  fairchild semi
tip142t.pdf

TIP142 TIP142

TIP140T/141T/142TMonolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.) Industrial Use Complement to TIP145T/146T/147TTO-22011.Base 2.Collector 3.EmitterNPN Epitaxial Silicon Darlington TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedEquivalent CircuitSymbol Parameter Val

 0.3. Size:62K  fairchild semi
tip142f.pdf

TIP142 TIP142

TIP140F/141F/142FMonolithic Construction With Built In Base-Emitter Shunt Resistors Complement to TIP145F/146F/147F High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.) Industrial UseTO-3PF11.Base 2.Collector 3.EmitterNPN Epitaxial Darlington TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedEquivalent CircuitCSymbol Parameter Value Uni

 0.4. Size:410K  cdil
tip142t 47t.pdf

TIP142 TIP142

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySILICON PLANAR POWER DARLINGTON TRANSISTORS TIP142T NPNTIP147T PNPTO-220Plastic PackageFor use in Power Linear and Switching ApplicationsABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITCollector Base Voltage VCBO 100 VCollector Emitter Voltage VCEO 100 VEmitter Base Voltage VEBO

 0.5. Size:518K  lzg
tip142t 3da142t.pdf

TIP142 TIP142

TIP142T(3DA142T) NPN /SILICON NPN TRANSISTOR : Purpose: Linear and switching industrial equipment. : - TIP147T(3CA147T) Features: Monolithic construction with built in base-emitter shunt resistorsHigh DC current gain complement to TIP147T(

 0.6. Size:173K  cn sptech
tip142t.pdf

TIP142 TIP142

SPTECH Product SpecificationSPTECH Silicon NPN Darlington Power Transistor TIP142TDESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 5AFE CCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)Complement to Type TIP147TAPPLICATIONSDesigned for general purpose amplifier and low speedswitching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

 0.7. Size:215K  inchange semiconductor
tip142t.pdf

TIP142 TIP142

isc Silicon NPN Darlington Power Transistor TIP142TDESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 5AFE CCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)Complement to Type TIP147TMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and low speedswitching applicatio

 0.8. Size:223K  inchange semiconductor
tip142f.pdf

TIP142 TIP142

isc Silicon NPN Darlington Power Transistor TIP142FDESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 5AFE CCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)Complement to Type TIP147FMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and lowfrequency switching applic

Datasheet: BC507FA , BC507FB , BC508 , BC508A , BC508B , BC508C , BC508F , BC508FA , 2N3055 , BC508FC , BC509 , BC509B , BC509C , BC509F , BC509FB , BC509FC , BC510 .

 

 
Back to Top