Биполярный транзистор TIP31 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: TIP31
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 40 W
Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 3 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 3 MHz
Статический коэффициент передачи тока (hfe): 20
Корпус транзистора: TO220
TIP31 Datasheet (PDF)
1.1. tip31are.pdf Size:196K _motorola
O r d e r t h i s d o c u m e n t M O T O R O L A b y T I P 3 1 A / D S E M I C O N D U C T O R T E C H N I C A L D A T A N P N T I P 3 1 A C o m p l e m e n t a r y S i l i c o n P l a s t i c T I P 3 1 B * P o w e r T r a n s i s t o r s T I P 3 1 C * . . . d e s i g n e d f o r u s e i n g e n e r a l p u r p o s e a m
1.2. tip31.pdf Size:39K _st
TIP31A/31B/31C TIP32A/32B/32C COMPLEMENTARY SILICON POWER TRANSISTORS n TIP31A, TIP31C, TIP32A,TIP32B, AND TIP32C ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The TIP31A, TIP31B and TIP31C are silicon epitaxial-base NPN power transistors in Jedec TO-220 plastic package, intented for use in medium power linear and switching applications. 3 2 The complementary PNP types are TIP3
1.3. tip31a.pdf Size:135K _st
TIP31A Power transistors General features ■ New enhanced series ■ High switching speed ■ hFE improved linearity Applications 3 2 1 ■ Linear and switching industrial application TO-220 Description The TIP31A is a base island technology NPN power transistor in TO-220 plastic package with better performances than the industry standard TIP31A that make this device suitabl
1.4. tip31-32.pdf Size:75K _st
TIP31A/31C TIP32A/32B/32C COMPLEMENTARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES APPLICATION LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT 3 2 1 DESCRIPTION The TIP31A and TIP31C are silicon epitaxial-base NPN transistors in Jedec TO-220 TO-220 plastic package, intented for use in medium power linear and switching applications. TIP32B is PNP power transistor.The
1.5. tip31a tip31c tip32a tip32b tip32c.pdf Size:173K _st
TIP31A/31C TIP32A/32B/32C ® COMPLEMENTARY SILICON POWER TRANSISTORS APPLICATION LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The TIP31A and TIP31C are silicon Epitaxial-Base NPN transistors mounted in Jedec TO-220 plastic package. They are intented 3 for use in medium power linear and switching 2 1 applications. The complementary PNP types are TIP32A and TO-220
1.6. tip31c.pdf Size:136K _st
TIP31C Power transistors General features ■ New enhanced series ■ High switching speed ■ hFE improved linearity ■ hFE Grouping 3 2 Applications 1 ■ Linear and switching industrial application TO-220 Description The TIP31C is a base island technology NPN power transistor in TO-220 plastic package with Internal schematic diagram better performances than the industry s
1.7. tip31 tip31a tip31b tip31c.pdf Size:526K _fairchild_semi
July 2008 TIP31/TIP31A/TIP31B/TIP31C NPN Epitaxial Silicon Transistor Features • Complementary to TIP32/TIP32A/TIP32B/TIP32C 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : TIP31 40 V : TIP31A 60 V : TIP31B 80 V : TIP31C 100 V VCEO Collector-Emitter Voltage : TIP31 40 V : TIP
1.8. tip31.pdf Size:37K _fairchild_semi
TIP31 Series(TIP31/31A/31B/31C) Medium Power Linear Switching Applications • Complementary to TIP32/32A/32B/32C TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : TIP31 40 V : TIP31A 60 V : TIP31B 80 V : TIP31C 100 V VCEO Collector-Emitter V
1.9. tip31abc.pdf Size:39K _fairchild_semi
TIP31 Series(TIP31/31A/31B/31C) Medium Power Linear Switching Applications • Complementary to TIP32/32A/32B/32C TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : TIP31 40 V : TIP31A 60 V : TIP31B 80 V : TIP31C 100 V VCEO Collector-Emitter V
1.10. tip31 tip31a tip31b tip31c to-220.pdf Size:256K _mcc
MCC TM Micro Commercial Components TIP31/31A/31B/31C 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features • Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates RoHS Compliant. See ordering information) Silicon NPN • The complementary PNP types are the TIP32 respectively • Epoxy meets UL 94 V-0
1.11. tip31-a-b-c-to220.pdf Size:131K _mcc
MCC TM Micro Commercial Components TIP31/A/B/C 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features • TO-220 package Silicon NPN • The complementary PNP types are the TIP32 respectively • Case Material: Molded Plastic. ULFlammability Power Transistors Classification Rating 94V-0 • Marking : Part Number
1.12. tip31-a-b-c tip32-a-b-c.pdf Size:126K _onsemi
TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP) Complementary Silicon http://onsemi.com Plastic Power Transistors Designed for use in general purpose amplifier and switching 3 AMPERE applications. POWER TRANSISTORS Features • Collector-Emitter Saturation Voltage - COMPLEMENTARY SILICON VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc 40-60-80-100 VOLTS, • Co
1.13. tip31c.pdf Size:164K _utc
UNISONIC TECHNOLOGIES CO., LTD TIP31C NPN EXPITAXIAL TRANSISTOR NPN EXPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC TIP31C is a NPN epitaxial planar transistor, designed for using in general purpose amplifier and switching applications. FEATURES * Complement to TIP32C. ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3
1.14. tip31-a-b-c.pdf Size:85K _bourns
TIP31, TIP31A, TIP31B, TIP31C NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the TIP32 Series TO-220 PACKAGE (TOP VIEW) ● 40 W at 25°C Case Temperature ● 3 A Continuous Collector Current B 1 ● 5 A Peak Collector Current C 2 ● Customer-Specified Selections Available 3 E Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum
1.15. tip31.pdf Size:89K _secos
TIP31 / TIP31A / TIP31B / TIP31C NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES TO-220J Medium Power Linear Switching Applications ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Ratings Parameter Symbol Unit TIP31 TIP31A TIP31B TIP31C Collector - Base Volta
1.16. tip31 tip32.pdf Size:316K _cdil
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PLASTIC POWER TRANSISTORS TIP31, A, B, C NPN TIP32, A, B, C PNP TO-220 Plastic Package Complementary Silicon Transistors intended for a wide variety of Switching and Amplifier Applications, Series and Shunt Regulators, Driver and Output stages of Hi-Fi Amplifiers ABSOLUTE MAXIMUM RATINGS (Ta=25º
1.17. tip31cf.pdf Size:436K _kec
SEMICONDUCTOR TIP31CF TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A C FEATURES DIM MILLIMETERS S _ Complementary to TIP32CF. A 10.0 + 0.3 _ + B 15.0 0.3 E C _ 2.70 0.3 + D 0.76+0.09/-0.05 _ E Φ3.2 0.2 + _ F 3.0 0.3 + _ 12.0 0.3 G + MAXIMUM RATING (Ta=25 ) 0.5+0.1/-0.05 H _ + J 13.6 0.5 L L R K _ 3.7 0.2 CHARACTERISTIC SYMBOL RA
1.18. tip31c.pdf Size:68K _kec
SEMICONDUCTOR TIP31C TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A R FEATURES S Complementary to TIP32C. P D DIM MILLIMETERS A 10.30 MAX B 15.30 MAX C 0.80 MAXIMUM RATING (Ta=25 ) _ + D Φ3.60 0.20 T E 3.00 CHARACTERISTIC SYMBOL RATING UNIT F 6.70 MAX _ G 13.60 + 0.50 L H 5.60 MAX VCBO Collector-Base Voltage 100 V C C J 1.37 MAX K 0.50
1.19. tip31 tip31a tip31b tip31c.pdf Size:204K _lge
TIP31/31A/31B/31C TO-220 Transistor (NPN) TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features Medium Power Linear Switching Applications Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter TIP31 TIP31A TIP31B TIP31C Units VCBO Collector-Base Voltage 40 60 80 100 V VCEO Collector-Emitter Voltage 40 60 80 100 V
1.20. tip31ce3.pdf Size:149K _cystek
Spec. No. : C609E3 Issued Date : 2003.09.04 CYStech Electronics Corp. Revised Date : Page No. : 1/4 3A NPN Epitaxial Planar Power Transistor TIP31CE3 Description TIP31CE3 is designed for use in general purpose amplifier and switching applications. Features • Low collector-emitter saturation voltage, VCE(sat) = 1.2V(max) @ IC = 3A • High collector-emitter sustaining vo
1.21. tip31cj3.pdf Size:310K _cystek
Spec. No. : C609J3 Issued Date : 2014.06.06 CYStech Electronics Corp. Revised Date : Page No. : 1/6 3A NPN Epitaxial Planar Power Transistor TIP31CJ3 Description TIP31CJ3 is designed for use in general purpose amplifier and switching applications. Features • Low collector-emitter saturation voltage, VCE(sat) = 0.5V(max) @ IC = 3A • High collector-emitter sustaining volta
1.22. sttip31c.pdf Size:530K _semtech
ST TIP31C NPN Silicon Epitaxial Planar Transistor for power switching and amplifier applications TO-220 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 100 V Collector Emitter Voltage VCEO 100 V Emitter Base Voltage VEBO 5 V Collector Current IC 3 A Collector Current (Pulse) ICP 5 A Base Current IB 1 A O Power Diss
1.23. tip31.pdf Size:377K _first_silicon
SEMICONDUCTOR TIP31 TECHNICAL DATA TRANSISTOR (NPN) TIP31/31A/31B/31C A O C F E FEATURES B DIM MILLIMETERS Medium Power Linear Switching Applications A 10.15 ± 0.15 B 15.30 MAX C 1.3+0.1/-0.15 P D 0.8 ± 0.1 E 3.8 ± 0.2 F 2.7 ± 0.2 J H 0.4 ± 0.15 D J 13.6 ± 0.2 N 2.54 ± 0.2 H N N MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) O 4.5 ± 0.2 1 2 3 P 2
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