All Transistors. TIP31 Datasheet

 

TIP31 Datasheet, Equivalent, Cross Reference Search

Type Designator: TIP31

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO220

TIP31 Transistor Equivalent Substitute - Cross-Reference Search

 

TIP31 Datasheet (PDF)

0.1. tip31are.pdf Size:196K _motorola

TIP31
TIP31

Order this documentMOTOROLAby TIP31A/DSEMICONDUCTOR TECHNICAL DATANPNTIP31AComplementary Silicon PlasticTIP31B*Power TransistorsTIP31C*. . . designed for use in general purpose am

0.2. tip31.pdf Size:39K _st

TIP31
TIP31

TIP31A/31B/31CTIP32A/32B/32CCOMPLEMENTARY SILICON POWERTRANSISTORSn TIP31A, TIP31C, TIP32A,TIP32B, ANDTIP32C ARE SGS-THOMSON PREFERREDSALESTYPESDESCRIPTIONThe TIP31A, TIP31B and TIP31C are siliconepitaxial-base NPN power transistors in JedecTO-220 plastic package, intented for use inmedium power linear and switching applications.32The complementary PNP types are TIP3

 0.3. tip31a.pdf Size:135K _st

TIP31
TIP31

TIP31APower transistorsGeneral features New enhanced series High switching speed hFE improved linearityApplications321 Linear and switching industrial applicationTO-220DescriptionThe TIP31A is a base island technology NPN power transistor in TO-220 plastic package with better performances than the industry standard TIP31A that make this device suitabl

0.4. tip31-32.pdf Size:75K _st

TIP31
TIP31

TIP31A/31CTIP32A/32B/32CCOMPLEMENTARY SILICON POWERTRANSISTORS SGS-THOMSON PREFERRED SALESTYPESAPPLICATION LINEAR AND SWITCHING INDUSTRIALEQUIPMENT321DESCRIPTIONThe TIP31A and TIP31C are siliconepitaxial-base NPN transistors in Jedec TO-220 TO-220plastic package, intented for use in mediumpower linear and switching applications.TIP32B is PNP power transistor.The

 0.5. tip31a tip31c tip32a tip32b tip32c.pdf Size:173K _st

TIP31
TIP31

TIP31A/31CTIP32A/32B/32CCOMPLEMENTARY SILICON POWER TRANSISTORSAPPLICATION LINEAR AND SWITCHING INDUSTRIALEQUIPMENT DESCRIPTION The TIP31A and TIP31C are siliconEpitaxial-Base NPN transistors mounted inJedec TO-220 plastic package. They are intented3for use in medium power linear and switching 21applications.The complementary PNP types are TIP32A andTO-220

0.6. tip31c.pdf Size:136K _st

TIP31
TIP31

TIP31CPower transistorsGeneral features New enhanced series High switching speed hFE improved linearity hFE Grouping32Applications1 Linear and switching industrial applicationTO-220DescriptionThe TIP31C is a base island technology NPN power transistor in TO-220 plastic package with Internal schematic diagrambetter performances than the industry s

0.7. tip31 tip31a tip31b tip31c.pdf Size:526K _fairchild_semi

TIP31
TIP31

July 2008TIP31/TIP31A/TIP31B/TIP31CNPN Epitaxial Silicon TransistorFeatures Complementary to TIP32/TIP32A/TIP32B/TIP32C1. Base 2. Collector 3. EmitterAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage : TIP31 40 V : TIP31A 60 V : TIP31B 80 V : TIP31C 100 V VCEO Collector-Emitter Voltage : TIP31 40 V : TIP

0.8. tip31.pdf Size:37K _fairchild_semi

TIP31
TIP31

TIP31 Series(TIP31/31A/31B/31C)Medium Power Linear Switching Applications Complementary to TIP32/32A/32B/32CTO-22011.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage : TIP31 40 V : TIP31A 60 V : TIP31B 80 V : TIP31C 100 V VCEO Collector-Emitter V

0.9. tip31abc.pdf Size:39K _fairchild_semi

TIP31
TIP31

TIP31 Series(TIP31/31A/31B/31C)Medium Power Linear Switching Applications Complementary to TIP32/32A/32B/32CTO-22011.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage : TIP31 40 V : TIP31A 60 V : TIP31B 80 V : TIP31C 100 V VCEO Collector-Emitter V

0.10. tip31 tip31a tip31b tip31c to-220.pdf Size:256K _mcc

TIP31
TIP31

MCCTMMicro Commercial ComponentsTIP31/31A/31B/31C20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates RoHS Compliant. See ordering information) Silicon NPN The complementary PNP types are the TIP32 respectively Epoxy meets UL 94 V-0

0.11. tip31-a-b-c-to220.pdf Size:131K _mcc

TIP31
TIP31

MCCTMMicro Commercial ComponentsTIP31/A/B/C20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features TO-220 packageSilicon NPN The complementary PNP types are the TIP32 respectively Case Material: Molded Plastic. ULFlammabilityPower TransistorsClassification Rating 94V-0 Marking : Part Number

0.12. tip31-a-b-c tip32-a-b-c.pdf Size:126K _onsemi

TIP31
TIP31

TIP31, TIP31A, TIP31B,TIP31C, (NPN), TIP32,TIP32A, TIP32B, TIP32C,(PNP)Complementary Siliconhttp://onsemi.comPlastic Power TransistorsDesigned for use in general purpose amplifier and switching3 AMPEREapplications.POWER TRANSISTORSFeatures Collector-Emitter Saturation Voltage - COMPLEMENTARY SILICONVCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc40-60-80-100 VOLTS, Co

0.13. tip31c.pdf Size:164K _utc

TIP31
TIP31

UNISONIC TECHNOLOGIES CO., LTD TIP31C NPN EXPITAXIAL TRANSISTOR NPN EXPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC TIP31C is a NPN epitaxial planar transistor, designed for using in general purpose amplifier and switching applications. FEATURES * Complement to TIP32C. ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3

0.14. tip31-a-b-c.pdf Size:85K _bourns

TIP31
TIP31

TIP31, TIP31A, TIP31B, TIP31CNPN SILICON POWER TRANSISTORS Designed for Complementary Use with the TIP32 SeriesTO-220 PACKAGE(TOP VIEW) 40 W at 25C Case Temperature 3 A Continuous Collector CurrentB 1 5 A Peak Collector CurrentC 2 Customer-Specified Selections Available 3EPin 2 is in electrical contact with the mounting base.MDTRACAabsolute maximum

0.15. tip31.pdf Size:89K _secos

TIP31
TIP31

TIP31 / TIP31A / TIP31B / TIP31C NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES TO-220J Medium Power Linear Switching Applications ABSOLUTE MAXIMUM RATINGS (TA=25C unless otherwise specified) Ratings Parameter Symbol Unit TIP31 TIP31A TIP31B TIP31C Collector - Base Volta

0.16. tip31 tip32.pdf Size:316K _cdil

TIP31
TIP31

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPLASTIC POWER TRANSISTORS TIP31, A, B, C NPNTIP32, A, B, C PNPTO-220Plastic PackageComplementary Silicon Transistors intended for a wide variety of Switching and Amplifier Applications, Series and Shunt Regulators, Driver and Output stages of Hi-Fi AmplifiersABSOLUTE MAXIMUM RATINGS (Ta=25

0.17. tip31cf.pdf Size:436K _kec

TIP31
TIP31

SEMICONDUCTOR TIP31CFTECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORGENERAL PURPOSE APPLICATION.ACFEATURESDIM MILLIMETERSS_Complementary to TIP32CF. A 10.0 + 0.3_+B 15.0 0.3EC _2.70 0.3+D 0.76+0.09/-0.05_E 3.2 0.2+_F 3.0 0.3+_12.0 0.3G +MAXIMUM RATING (Ta=25 ) 0.5+0.1/-0.05H_+J 13.6 0.5L LRK _3.7 0.2CHARACTERISTIC SYMBOL RA

0.18. tip31c.pdf Size:68K _kec

TIP31
TIP31

SEMICONDUCTOR TIP31CTECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORGENERAL PURPOSE APPLICATION.ARFEATURES S Complementary to TIP32C.PDDIM MILLIMETERSA 10.30 MAXB 15.30 MAXC 0.80MAXIMUM RATING (Ta=25 ) _+D 3.60 0.20TE 3.00CHARACTERISTIC SYMBOL RATING UNIT F 6.70 MAX_G 13.60 + 0.50LH 5.60 MAXVCBOCollector-Base Voltage 100 VC CJ 1.37 MAXK 0.50

0.19. tip31 tip31a tip31b tip31c.pdf Size:204K _lge

TIP31
TIP31

TIP31/31A/31B/31C TO-220 Transistor (NPN)TO-2201. BASE 2. COLLECTOR 3. EMITTER 3 21Features Medium Power Linear Switching Applications Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter TIP31 TIP31A TIP31B TIP31C Units VCBO Collector-Base Voltage 40 60 80 100 V VCEO Collector-Emitter Voltage 40 60 80 100 V

0.20. tip31ce3.pdf Size:149K _cystek

TIP31
TIP31

Spec. No. : C609E3 Issued Date : 2003.09.04 CYStech Electronics Corp. Revised Date : Page No. : 1/4 3A NPN Epitaxial Planar Power Transistor TIP31CE3 Description TIP31CE3 is designed for use in general purpose amplifier and switching applications. Features Low collector-emitter saturation voltage, VCE(sat) = 1.2V(max) @ IC = 3A High collector-emitter sustaining vo

0.21. tip31cj3.pdf Size:310K _cystek

TIP31
TIP31

Spec. No. : C609J3 Issued Date : 2014.06.06CYStech Electronics Corp.Revised Date : Page No. : 1/6 3A NPN Epitaxial Planar Power Transistor TIP31CJ3 Description TIP31CJ3 is designed for use in general purpose amplifier and switching applications. Features Low collector-emitter saturation voltage, VCE(sat) = 0.5V(max) @ IC = 3A High collector-emitter sustaining volta

0.22. sttip31c.pdf Size:530K _semtech

TIP31
TIP31

ST TIP31C NPN Silicon Epitaxial Planar Transistor for power switching and amplifier applications TO-220 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 100 VCollector Emitter Voltage VCEO 100 VEmitter Base Voltage VEBO 5 VCollector Current IC 3 ACollector Current (Pulse) ICP 5 ABase Current IB 1 AOPower Diss

0.23. tip31.pdf Size:377K _first_silicon

TIP31
TIP31

SEMICONDUCTORTIP31TECHNICAL DATA TRANSISTOR (NPN) TIP31/31A/31B/31CAOCFE FEATURESBDIM MILLIMETERSMedium Power Linear Switching Applications A 10.15 0.15 B 15.30 MAXC 1.3+0.1/-0.15PD 0.8 0.1E 3.8 0.2F 2.7 0.2JH 0.4 0.15DJ 13.6 0.2N 2.54 0.2HN NMAXIMUM RATINGS (Ta=25 unless otherwise noted) O 4.5 0.21 2 3P 2

0.24. tip31 tip31a tip31b tip31c.pdf Size:149K _inchange_semiconductor

TIP31
TIP31

Inchange Semiconductor Product Specification Silicon NPN Power Transistors TIP31/31A/31B/31C DESCRIPTION With TO-220C package Complement to type TIP32/32A/32B/32C APPLICATIONS Medium power linear switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIO

0.25. tip31d.pdf Size:210K _inchange_semiconductor

TIP31
TIP31

isc Silicon NPN Power Transistors TIP31DDESCRIPTIONDC Current Gain -h = 25(Min)@ I = 1AFE CCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR) CEOComplement to Type TIP32DMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifier and switchingapplications.ABSOLUTE MAXIMUM RATI

0.26. tip31f.pdf Size:231K _inchange_semiconductor

TIP31
TIP31

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors TIP31F DESCRIPTION DC Current Gain -hFE = 25(Min)@ IC= 1A Collector-Emitter Breakdown Voltage- : V(BR) CEO= 160V(Min) Complement to Type TIP32F APPLICATIONS Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER

0.27. tip31e.pdf Size:231K _inchange_semiconductor

TIP31
TIP31

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors TIP31E DESCRIPTION DC Current Gain -hFE = 25(Min)@ IC= 1A Collector-Emitter Breakdown Voltage- : V(BR) CEO= 140V(Min) Complement to Type TIP32E APPLICATIONS Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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