Order this documentMOTOROLAby 2N5301/DSEMICONDUCTOR TECHNICAL DATA2N53012N5302High-Power NPN Silicon2N5303Transistors. . . for use in power amplifier and switching circuits applications.20 AND 30 AMPERE High CollectorEmitter Sustaining Voltage POWER TRANSISTORSVCEO(sus) = 80 Vdc (Min) @ IC = 200 mAdc (2N5303)NPN SILICON Low CollectorEmitter Saturatio

2N5320SMALL SIGNAL NPN TRANSISTORDESCRIPTION The 2N5320 is a silicon Epitaxial Planar NPNtransistor in Jedec TO-39 metal case. It isespecially intended for high-voltage mediumpower application in industrial and commercialequipments.The complementary PNP type is the 2N5322TO-39INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCBO Collecto

2N53202N5321SMALL SIGNAL NPN TRANSISTORS SILICON EPITAXIAL PLANAR NPNTRANSISTORS MEDIUM POWER AMPLIFIER PNP COMPLEMENTS ARE 2N5322 AND2N5323DESCRIPTION The 2N5320 and 2N5321 are silicon epitaxialplanar NPN transistors in Jedec TO-39 metalcase. They are especially intended forhigh-voltage medium power application inindustrial and commercial equipments.TO-39The compl

2N53222N5323SMALL SIGNAL PNP TRANSISTORS SILICON EPITAXIAL PLANAR PNPTRANSISTORS MEDIUM POWER AMPLIFIER NPN COMPLEMENTS ARE 2N5320 AND2N5321DESCRIPTION The 2N5322 and 2N5323 are silicon epitaxialplanar PNP transistors in Jedec TO-39 metalcase. They are especially intended forhigh-voltage medium power application inindustrial and commercial equipments.TO-39The compl

2N5322SMALL SIGNAL PNP TRANSISTORDESCRIPTION The 2N5322 is a silicon Epitaxial Planar PNPtransistor in Jedec TO-39 metal case. It isespecially intended for high-voltage mediumpower application in industrial and commercialequipments.The complementary NPN type is 2N5320.TO-39INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCBO Collector-B

2N5366PNP General Purpose Amplifier This device is designed for general purpose amplifiers applications at collector currents to 300mA. Sourced from process 68.TO-9211. Emitter 2. Collector 3. Base Absolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 40 VVCBO Collector-Base Voltage 40 VVEBO Emitter-Base

2N5306NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0A. Sourced from process 05. See MPSA14 for characteristics.TO-9211. Emitter 2. Collector 3. BaseAbsolute Maximum Ratings * TA=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 25 VVCBO Collector-Bas

2N5308NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0A. Sourced from process 05. See MPSA14 for characteristics.TO-9211. Emitter 2. Collector 3. BaseAbsolute Maximum Ratings * TA=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 40 VVCBO Collector-Bas

2N5307NPN General Purpose Amplifier This device designed for applications requiring extremely high current gain at currents to 1.0A. Sourced from Process 05. See MPSA14 for characteristics.TO-9211. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCEO Collector-Emit

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824TMCentralSemiconductor Corp.145 Adams AvenueHauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824www.centralsemi.com

DATA SHEET2N5320 2N5321 NPN 2N5322 2N5323 PNP COMPLEMENTARY SILICON SWITCHING TRANSISTORS JEDEC TO-39 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5320 Series types are Complementary Silicon Power Transistors manufactured by the Epitaxial Planar Process, mounted in a hermetically sealed metal case, designed for amplifier and switching applications. MAXIMUM RATINGS (TC=25C

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

2N5302High-Power NPN SiliconTransistorHigh-power NPN silicon transistors are for use in power amplifierand switching circuits applications.Featureshttp://onsemi.com Low Collector-Emitter Saturation Voltage -VCE(sat) = 0.75 Vdc (Max) @ IC = 10 Adc30 AMPERES Pb-Free Package is Available*POWER TRANSISTORNPN SILICONMAXIMUM RATINGS (Note 1) (TJ = 25C unless otherwis

2N5302High-Power NPN SiliconTransistorHigh-power NPN silicon transistors are for use in power amplifierand switching circuits applications.Featureshttp://onsemi.com Low Collector-Emitter Saturation Voltage -VCE(sat) = 0.75 Vdc (Max) @ IC = 10 Adc30 AMPERES Pb-Free Package is Available*POWER TRANSISTORNPN SILICONMAXIMUM RATINGS (Note 1) (TJ = 25C unless otherwis

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2N5320X SMALL SIGNAL SILICON NPN MECHANICAL DATA Dimensions in mm (inches) TRANSISTOR 8.51 (0.34)9.40 (0.37)7.75 (0.305)8.51 (0.335)6.10 (0.240)FEATURES 6.60 (0.260) SILICON NPN TRANSISTOR 0.89(0.035)max. METAL CASE (JEDEC TO-39) 12.70(0.500) 0.41 (0.016)min.0.53 (0.021) HIGH SPEED SATURATED SWITCHING dia.5.08 (0.200)typ.2.542(0.100)

2N5339LCC4MECHANICAL DATADimensions in mm (inches)NPN SILICONTRANSISTORS9.14 (0.360)1.27 (0.050) 8.64 (0.340)1.07 (0.040) 2.16 (0.085)12 13 14 15 161.39 (0.055)1.02 (0.040)11 1710 187.62 (0.300)7.12 (0.280)9 10.76 (0.030)FEATURES8 20.51 (0.020) Hermetically sealed ceramic surface0.33 (0.013)Rad.0.08 (0.003)7 6 5 4 3mount package0.43 (0

2N5333Dimensions in mm (inches). Bipolar PNP Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar PNP Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 80V dia.IC = 2A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1 3

2N5334Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 60V dia.IC = 3A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1 3

2N5339LCC4MECHANICAL DATADimensions in mm (inches)NPN SILICONTRANSISTORS9.14 (0.360)1.27 (0.050) 8.64 (0.340)1.07 (0.040) 2.16 (0.085)12 13 14 15 161.39 (0.055)1.02 (0.040)11 1710 187.62 (0.300)7.12 (0.280)9 10.76 (0.030)FEATURES8 20.51 (0.020) Hermetically sealed ceramic surface0.33 (0.013)Rad.0.08 (0.003)7 6 5 4 3mount package0.43 (0

2N5335Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 80V dia.IC = 3A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1 3

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySILICON POWER SWITCHING TRANSISTORS 2N5320, 2N5321 NPN2N5322, 2N5323 PNPTO-39Metal Can PackageMedium Power Amplifier and Switching ApplicationsABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL 2N5320 2N5321 2N5322 2N5323 UNITSVCEOCollector Emitter Voltage 75 50 75 50 VVCBOCollector Base Vol

Databook.fxp 1/13/99 2:09 PM Page B-20B-20 01/992N5397, 2N5398N-Channel Silicon Junction Field-Effect TransistorAbsolute maximum ratings at TA = 25C Low-NoiseReverse Gate Source & Reverse Gate Drain Voltage 25 V High Power GainDrain Source Voltage 25 V High TransconductanceContinuous Forward Gate Current 10 mAContinuous Device Power Dissipation 300 mW Mixer

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http://www.microsemi.com NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/560 DEVICES LEVELS 2N5339 2N5339U3 JANJANTXJANTXVJANSABSOLUTE MA

NPN Power Silicon Transistor2N5339Features Available in JAN, JANTX, JANTXV and JANSper MIL-PRF-19500/560 TO-39 (TO-205AD) PackageMaximum RatingsRatings Symbol Value UnitsCollector - Emitter Voltage VCEO 100 VdcCollector - Base Voltage VCBO 100 VdcEmitter - Base Voltage VEBO 6.0 VdcBase Current IB 1.0 AdcCollector Current IC 5.0 AdcTotal Power Dissipation @ TA = 2

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistors 2N5301DESCRIPTIONLow Collector Saturation Voltage-: V = 0.75V(Max.)@ I = 10ACE(sat) CWide Area of Safe OperationComplement to Type 2N4398APPLICATIONSDesigned for use in power amplifier and switching circuitsapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Ba

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistors 2N5302DESCRIPTIONLow Collector Saturation Voltage-: V = 0.75V(Max.)@ I = 10ACE(sat) CWide Area of Safe OperationComplement to Type 2N4399APPLICATIONSDesigned for use in power amplifier and switching circuitsapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Ba

isc Silicon PNP Power Transistor 2N5345DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = -280V(Min)CEO(SUS)High Switching SpeedHigh Current-Gain Bandwidth Product-: f = 60MHz(Min)@ I = -0.1AT CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage switching and amplifierapplications.AB

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N5301 DESCRIPTION Low Collector Saturation Voltage- : VCE(sat)= 0.75V(Max.)@ IC= 10A Wide Area of Safe Operation Complement to Type 2N4398 APPLICATIONS Designed for use in power amplifier and switching circuits applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALU

INCHANGE Semiconductorisc Silicon NPN Power Transistors 2N5302DESCRIPTIONLow Collector Saturation Voltage-: V = 0.75V(Max.)@ I = 10ACE(sat) CWide Area of Safe OperationComplement to Type 2N4399100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for use in power amplifier and switching cir

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5301 2N5302 2N5303 DESCRIPTION With TO-3 package Complement to type 2N4398/4399/5745 Low collector/saturation voltage Excellent safe operating area APPLICATIONS For use in power amplifier and switching circuits applications. PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified o

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2N5344 DESCRIPTION High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -250V(Min) High Switching Speed High Current-Gain Bandwidth Product- : fT= 60MHz(Min)@ IC= -0.1A APPLICATIONS Designed for high voltage switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25)