TK70 - описание и поиск аналогов

TK70J06K3 MOSFETs Silicon N-channel MOS (U-MOS ) TK70J06K3 TK70J06K3 TK70J06K3 TK70J06K3 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators DC-DC Converters Motor Drivers 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 4.8 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS

TK70J20D MOSFETs Silicon N-Channel MOS ( -MOS ) TK70J20D TK70J20D TK70J20D TK70J20D 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.02 (typ.) (2) Low leakage current IDSS = 10 A (max) (VDS = 200 V) (3) Enhancement mode Vth =

TK70X04K3 MOSFETs Silicon N-channel MOS (U-MOS ) TK70X04K3 TK70X04K3 TK70X04K3 TK70X04K3 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 3.7 m (typ.) (VGS = 10 V) (2) Low leakage current IDS

TK70J04K3Z MOSFETs Silicon N-channel MOS (U-MOS ) TK70J04K3Z TK70J04K3Z TK70J04K3Z TK70J04K3Z 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators DC-DC Converters Motor Drivers 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 3.2 m (typ.) (VGS = 10 V) (2) Low leakage current

TK70A06J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOS ) TK70A06J1 Switching Regulator Application Unit mm High-Speed switching Small gate charge Qg = 87nC (typ.) Low drain-source ON resistance RDS (ON) = 5.1 m (typ.) High forward transfer admittance Yfs = 80 S (typ.) Low leakage current IDSS = 10 A (max) (V

TK70D06J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOS ) TK70D06J1 Switching Regulator Application Unit mm High-Speed switching Small gate charge Q = 87nC (typ.) g Low drain-source ON resistance RDS (ON) = 5.1 m (typ.) High forward transfer admittance Yfs = 80S Low leakage current IDSS = 10 A (max) (VDS =

TK70X06K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS ) TK70X06K3 Load switch Applications Unit mm Motor Drive Applications 9.2 MAX. 7.0 0.2 0.4 0.1 4 Low drain-source ON-resistance RDS (ON) = 6.5 m (typ.) High forward transfer admittance Yfs = 120 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 60 V) Enhance

TK70J04J3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS ) TK70J04J3 Motor Drive Application Unit mm Low drain-source ON resistance RDS (ON) = 3.0 m (typ.) High forward transfer admittance Yfs = 120 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 40 V) Enhancement mode Vth = 1.5 to 3.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ra

STK7002 Advanced N-Channel MOSFET HIGH SPEED SWITCHING APPLICATIONS Features PIN Connection Low Gate Threshold Voltage D Low Crss Crss=2.0pF(Typ.) Voltage controlled small signal switch Low RDS(on) RDS(on)=5 (Max.) D G Ordering Information G Type No. Marking Package Code S S K702 STK7002 SOT-23 SOT-23 Marking Diagram

STK7006P Semiconductor Semiconductor Advanced Power MOSFET SWITCHING REGURATOR APPLICATIONS Features High Voltage BVDSS=60V(Min.) Low Crss Crss=84pF(Typ.) Low gate charge Qg=26.7nC(Typ.) Low RDS(on) RDS(on)=16m (Max.) Ordering Information Type NO. Marking Package Code STK7006P STK7006 TO-220AB-3L Outline Dimensions unit mm 3.90 Max. 1.1

SEMICONDUCTOR FTK7002E TECHNICAL DATA Small Signal MOSFET 115 mAmps, 60 Volts N Channel SOT 23 3 Features 2 1) Low on-resistance. (MAX 7.5 ) 1 2) Fast switching speed. 3) Low-voltage drive. SOT 23 (TO 236AB) 4) Easily designed drive circuits. 5) Easy to parallel. 6) Pb-Free package is available. 7) Esd Protected 2000V Device Marking and Ordering Information

SEMICONDUCTOR FTK7002D TECHNICAL DATA Dual Small Signal MOSFET 115 mAmps, 60 Volts N-Channel SC-88 We declare that the material of product are Halogen Free and compliance with RoHS requirements. ESD Protected 1000V MAXIMUM RATINGS Rating Symbol Value Unit 3 2 1 Drain-Source Voltage VDSS 60 Vdc D2 G1 S1 Drain-Gate Voltage (RGS = 1.0 M ) VDGR 60 Vdc Drain Current ID

SEMICONDUCTOR FTK7002U TECHNICAL DATA Small Signal MOSFET 115 mAmps, 60 Volts 3 N Channel SOT 323 2 We declare that the material of product are Halogen Free and 1 compliance with RoHS requirements. SOT-323 ESD Protected 1000V MAXIMUM RATINGS(Ta = 25 ) Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain Gate Voltage (RGS VDGR 60 Vdc Simplifie

SEMICONDUCTOR FTK7002 TECHNICAL DATA Small Signal MOSFET 115 mAmps, 60 Volts 3 N Channel SOT 23 2 We declare that the material of product are Halogen Free and 1 compliance with RoHS requirements. SOT 23 (TO 236AB) ESD Protected 1000V MAXIMUM RATINGS Rating Symbol Value Unit Simplified Schematic Drain Source Voltage VDSS 60 Vdc Drain Gate Voltage (RGS = 1

SEMICONDUCTOR FTK7000 TECHNICAL DATA B C FTK7000 MOSFET (N-Channel) DIM MILLIMETERS A 4.70 MAX E FEATURES B 4.80 MAX G C 3.70 MAX D High density cell design for low RDS(ON) D 0.55 MAX E 1.00 F 1.27 Voltage controlled small signal switch G 0.85 H 0.45 _ Rugged and reliable H J 14.00 0.50 L 2.30 F F M 0.51 MAX High saturation current capability 1. SOURCE 1 2 3

SEMICONDUCTOR FTK70N06 TECHNICAL DATA 60V N-Channel MOSFET BVDSS = 60 V RDS(on) = 15 m Features ID = 70 A RDS(on) (Max 0.015 )@VGS =10V Gate Charge (Typical 39nC) TO-220 Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested 1 2 3 Maximum Junction Temperature Range (175 C) 1.Gate 2. Drain 3. Source D G S Absolute Maximum Ratings TC

SEMICONDUCTOR FTK7002K TECHNICAL DATA Small Signal MOSFET 380 mAmps, 60 Volts N Channel SOT 23 3 Features ESD Protected 2 1 Low RDS(on) Surface Mount Package SOT 23 (TO 236AB) This is a Pb- Free Device We declare that the material of product are Halogen Free and compliance with RoHS requirements. Applications Low Side Load Switch Level

68V, 80A, 7.3m N-channel Power Trench MOSFET JMTK70N07A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 68 V 100% Vds Tested VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 80 A RDS(ON)_Typ(@VGS=10V 7.3 mW Pb-free plating Applications Load Switch PWM Application Power Manag