TK70 Datasheet and Replacement

TK70J06K3MOSFETs Silicon N-channel MOS (U-MOS)TK70J06K3TK70J06K3TK70J06K3TK70J06K31. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators DC-DC Converters Motor Drivers2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 4.8 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS

TK70J20DMOSFETs Silicon N-Channel MOS (-MOS)TK70J20DTK70J20DTK70J20DTK70J20D1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.02 (typ.)(2) Low leakage current: IDSS = 10 A (max) (VDS = 200 V)(3) Enhancement mode: Vth =

TK70X04K3MOSFETs Silicon N-channel MOS (U-MOS )TK70X04K3TK70X04K3TK70X04K3TK70X04K31. Applications1. Applications1. Applications1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 3.7 m (typ.) (VGS = 10 V)(2) Low leakage current: IDS

TK70J04K3ZMOSFETs Silicon N-channel MOS (U-MOS)TK70J04K3ZTK70J04K3ZTK70J04K3ZTK70J04K3Z1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators DC-DC Converters Motor Drivers2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 3.2 m (typ.) (VGS = 10 V)(2) Low leakage current:

TK70A06J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOS) TK70A06J1 Switching Regulator Application Unit: mm High-Speed switching Small gate charge: Qg = 87nC (typ.) Low drain-source ON resistance: RDS (ON) = 5.1 m (typ.) High forward transfer admittance: |Yfs| = 80 S (typ.) Low leakage current: IDSS = 10 A (max) (V

TK70D06J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOS) TK70D06J1 Switching Regulator Application Unit: mm High-Speed switching Small gate charge: Q = 87nC (typ.) g Low drain-source ON resistance: RDS (ON) = 5.1 m (typ.) High forward transfer admittance: |Yfs| = 80S Low leakage current: IDSS = 10 A (max) (VDS =

TK70X06K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS) TK70X06K3 Load switch Applications Unit: mmMotor Drive Applications 9.2 MAX. 7.0 0.2 0.4 0.1 4 Low drain-source ON-resistance: RDS (ON) = 6.5 m (typ.) High forward transfer admittance: |Yfs| = 120 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 60 V) Enhance

TK70J04J3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS) TK70J04J3 Motor Drive Application Unit: mm Low drain-source ON resistance: RDS (ON) = 3.0 m (typ.) High forward transfer admittance: |Yfs| = 120 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 40 V) Enhancement mode: Vth = 1.5 to 3.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ra

STK7002Advanced N-Channel MOSFETHIGH SPEED SWITCHING APPLICATIONS Features PIN Connection Low Gate Threshold Voltage D Low Crss : Crss=2.0pF(Typ.) Voltage controlled small signal switch Low RDS(on) : RDS(on)=5(Max.) D G Ordering Information G Type No. Marking Package Code S S K702 STK7002 SOT-23 SOT-23 Marking Diagram

STK7006PSemiconductor Semiconductor Advanced Power MOSFETSWITCHING REGURATOR APPLICATIONS Features High Voltage: BVDSS=60V(Min.) Low Crss : Crss=84pF(Typ.) Low gate charge : Qg=26.7nC(Typ.) Low RDS(on) :RDS(on)=16m(Max.) Ordering Information Type NO. Marking Package Code STK7006P STK7006 TO-220AB-3LOutline Dimensions unit : mm 3.90 Max. 1.1

SEMICONDUCTORFTK7002ETECHNICAL DATASmall Signal MOSFET115 mAmps, 60 VoltsNChannel SOT233Features 21) Low on-resistance. (MAX 7.5)12) Fast switching speed.3) Low-voltage drive.SOT 23 (TO236AB)4) Easily designed drive circuits.5) Easy to parallel.6) Pb-Free package is available.7) Esd Protected : 2000VDevice Marking and Ordering Information

SEMICONDUCTORFTK7002DTECHNICAL DATADual Small Signal MOSFET115 mAmps, 60 VoltsN-Channel SC-88 We declare that the material of product are Halogen Free andcompliance with RoHS requirements. ESD Protected:1000VMAXIMUM RATINGSRating Symbol Value Unit3 2 1Drain-Source Voltage VDSS 60 VdcD2 G1 S1Drain-Gate Voltage (RGS = 1.0 M ) VDGR 60 VdcDrain Current ID

SEMICONDUCTORFTK7002UTECHNICAL DATASmall Signal MOSFET115 mAmps, 60 Volts3NChannel SOT3232 We declare that the material of product are Halogen Free and 1compliance with RoHS requirements.SOT-323 ESD Protected:1000VMAXIMUM RATINGS(Ta = 25 )Rating Symbol Value UnitDrainSource Voltage VDSS 60VdcDrainGate Voltage (RGS VDGR 60VdcSimplifie

SEMICONDUCTORFTK7002ENTECHNICAL DATASmall Signal MOSFET30 V, 154 mA, Single, N-Channel, GateESD Protection, SC-893Features Low Gate Charge for Fast Switching1 Small 1.6 X 1.6 mm Footprint2 ESD Protected Gate We declare that the material of product is ROHS compliant SC-89and halogen free.Applications Power Management Load Switch Level Shift

SEMICONDUCTORFTK7002TECHNICAL DATASmall Signal MOSFET115 mAmps, 60 Volts3NChannel SOT232 We declare that the material of product are Halogen Free and 1compliance with RoHS requirements.SOT 23 (TO236AB) ESD Protected:1000VMAXIMUM RATINGSRating Symbol Value Unit Simplified SchematicDrainSource Voltage VDSS 60 VdcDrainGate Voltage (RGS = 1

SEMICONDUCTORFTK7000TECHNICAL DATAB CFTK7000 MOSFET (N-Channel) DIM MILLIMETERSA 4.70 MAXEFEATURES B 4.80 MAXGC 3.70 MAXD High density cell design for low RDS(ON) D 0.55 MAXE 1.00F 1.27 Voltage controlled small signal switch G 0.85H 0.45_ Rugged and reliable HJ 14.00 0.50L 2.30F FM 0.51 MAX High saturation current capability 1. SOURCE1 2 3

SEMICONDUCTORFTK70N06TECHNICAL DATA60V N-Channel MOSFETBVDSS = 60 VRDS(on) = 15 mFeaturesID = 70 ARDS(on) (Max 0.015 )@VGS =10VGate Charge (Typical 39nC)TO-220 Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested123Maximum Junction Temperature Range (175C)1.Gate 2. Drain 3. SourceDGSAbsolute Maximum Ratings TC

SEMICONDUCTORFTK7002KTECHNICAL DATASmall Signal MOSFET 380 mAmps, 60 VoltsNChannel SOT233Features ESD Protected 21 Low RDS(on) Surface Mount PackageSOT 23 (TO236AB) This is a Pb- Free Device We declare that the material of product are Halogen Free andcompliance with RoHS requirements.Applications Low Side Load Switch Level