Биполярный транзистор TR21 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: TR21
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.36 W
Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.5 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 250 MHz
Ёмкость коллекторного перехода (Cc): 8 pf
Статический коэффициент передачи тока (hfe): 60
TR21 Datasheet (PDF)
2str2160.pdf
2STR2160 Low voltage fast-switching PNP power transistor Datasheet - production data Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Miniature SOT-23 plastic package for surface mounting circuits Applications LED Battery charger SOT-23 Motor and relay driver Voltage regulation
ixtr210p10t.pdf
Advance Technical InformationTrenchPTM VDSS = -100VIXTR210P10TPower MOSFET ID25 = -158A RDS(on) 8m P-Channel Enhancement ModeAvalanche RatedFast Intrinsic RectifierISOPLUS247E153432Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C -100 VGVDGR TJ = 25C to 150C, RGS = 1M -100 VIsolated TabDSVGSS Continuous
ntr2101p-d.pdf
NTR2101PSmall Signal MOSFET-8.0 V, -3.7 A, Single P-Channel, SOT-23Features Leading Trench Technology for Low RDS(on)http://onsemi.com -1.8 V Rated for Low Voltage Gate DriveV(BR)DSS RDS(on) Typ ID Max SOT-23 Surface Mount for Small Footprint (3 x 3 mm)39 mW @ -4.5 V This is a Pb-Free Device-8.0 V52 mW @ -2.5 V -3.7 AApplications High Side Load Switch
ntr2101pt1g.pdf
NTR2101PSmall Signal MOSFET-8.0 V, -3.7 A, Single P-Channel, SOT-23Features Leading Trench Technology for Low RDS(on)http://onsemi.com -1.8 V Rated for Low Voltage Gate DriveV(BR)DSS RDS(on) Typ ID Max SOT-23 Surface Mount for Small Footprint (3 x 3 mm)39 mW @ -4.5 V This is a Pb-Free Device-8.0 V52 mW @ -2.5 V -3.7 AApplications High Side Load Switch
ntr2101p.pdf
NTR2101PSmall Signal MOSFET-8.0 V, -3.7 A, Single P-Channel, SOT-23Features Leading Trench Technology for Low RDS(on)www.onsemi.com -1.8 V Rated for Low Voltage Gate DriveV(BR)DSS RDS(on) Typ ID Max SOT-23 Surface Mount for Small Footprint (3 x 3 mm)39 mW @ -4.5 V This is a Pb-Free Device-8.0 V52 mW @ -2.5 V -3.7 AApplications79 mW @ -1.8 V High Side
ntr2101p.pdf
Product specificationNTR2101PSmall Signal MOSFETV(BR)DSS RDS(on) Typ ID Max39 mW @ -4.5 V-8.0 V, -3.7 A, Single P-Channel, SOT-23-8.0 V52 mW @ -2.5 V -3.7 AFeatures79 mW @ -1.8 V Leading Trench Technology for Low RDS(on)P-Channel -1.8 V Rated for Low Voltage Gate DriveD SOT-23 Surface Mount for Small Footprint (3 x 3 mm) This is a Pb-Free DeviceApplic
ntr2101pt1g.pdf
NTR2101PT1Gwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS
Другие транзисторы... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050