Биполярный транзистор UMB11N - описание производителя. Основные параметры. Даташиты.
Наименование производителя: UMB11N
Маркировка: B11
Тип материала: Si
Полярность: Pre-Biased-PNP
Встроенный резистор цепи смещения R1 = 10 kOhm
Встроенный резистор цепи смещения R2 = 10 kOhm
Соотношение сопротивлений R1/R2 = 1
Максимальная рассеиваемая мощность (Pc): 0.15 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 140 MHz
Статический коэффициент передачи тока (hfe): 20
Корпус транзистора: SC-88
UMB11N Datasheet (PDF)
emb11 umb11n imb11a umb11n.pdf
EMB11 / UMB11N / IMB11A Transistors General purpose (dual digital transistors) EMB11 / UMB11N / IMB11A Features External dimensions (Unit : mm) 1) Two DTA114E chips in a EMT or UMT or SMT EMB11package. 2) Mounting possible with EMT3 or UMT3 or SMT3 (4) (3)(5) (2)automatic mounting machines. (6) (1)1.21.63) Transistor elements are independent, eliminating inte
umb11n imb11a b11 sot23-6 sot363.pdf
TransistorsGeneral purpose(dual digital transistors)UMB11N / IMB11AFFeatures FExternal dimensions (Units: mm)1) Two DTA114Es in a UMT or SMTpackage.2) Mounting possible with UMT3 orSMT3 automatic mounting ma-chines.3) Transistor elements are indepen-dent, eliminating interference.4) Mounting cost and area can be cutin half.FStructureEpitaxial planar typePNP silic
umb11nfha.pdf
EMB11FHA / UMB11NFHA / IMB11AFRAEMB11 / UMB11N / IMB11ADatasheetPNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) (5) VCC-50V (4) (4) (1) (1) (2) IC(MAX.) (2) -100mA (3) (3) R110kWEMB11 UMB11N EMB11FHA UMB11NFHAR210kW (SC-107C) SOT-353 (S
emb11fha umb11nfha imb11afra.pdf
EMB11FHA / UMB11NFHA / IMB11AFRAEMB11 / UMB11N / IMB11ADatasheetPNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) (5) VCC-50V (4) (4) (1) (1) (2) IC(MAX.) (2) -100mA (3) (3) R110kWEMB11 UMB11N EMB11FHA UMB11NFHAR210kW (SC-107C) SOT-353 (S
pemb11 pumb11.pdf
DISCRETE SEMICONDUCTORS DATA SHEETPEMB11; PUMB11PNP/PNP resistor-equipped transistors; R1 = 10 k, R2 = 10 kProduct data sheet 2003 Oct 03Supersedes data of 2001 Sep 13NXP Semiconductors Product data sheetPNP/PNP resistor-equipped transistors; PEMB11; PUMB11R1 = 10 k, R2 = 10 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. U
pumb11 1.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageMBD128PUMB11PNP resistor-equipped doubletransistorProduct specification 2000 Aug 08Philips Semiconductors Product specificationPNP resistor-equipped double transistor PUMB11FEATURES Transistors with built-in bias resistors R1 and R2(typ. 10 k each) No mutual interference between the transistors6 5 4handbook,
chumb11gp.pdf
CHENMKO ENTERPRISE CO.,LTDCHUMB11GPSURFACE MOUNT Dual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 50 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-88/SOT-363)SC-88/SOT-363* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation cur
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050 | HSA1037AKS