Справочник транзисторов. 2N5330

 

Биполярный транзистор 2N5330 - описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2N5330

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 80 W

Макcимально допустимое напряжение коллектор-база (Ucb): 150 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 90 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 30 A

Предельная температура PN-перехода (Tj): 200 °C

Граничная частота коэффициента передачи тока (ft): 80 MHz

Статический коэффициент передачи тока (hfe): 40

Корпус транзистора: TO61

Аналоги (замена) для 2N5330

 

 

2N5330 Datasheet (PDF)

5.1. 2n5339u3.pdf Size:178K _upd

2N5330
2N5330

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http://www.microsemi.com NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/560 DEVICES LEVELS 2N5339 2N5339U3 JAN JANTX JANTXV JANS ABSOLUTE MA

5.2. 2n5339lcc4.pdf Size:20K _upd

2N5330
2N5330

2N5339LCC4 MECHANICAL DATA Dimensions in mm (inches) NPN SILICON TRANSISTORS 9.14 (0.360) 1.27 (0.050) 8.64 (0.340) 1.07 (0.040) ≈ 2.16 (0.085) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 11 17 10 18 7.62 (0.300) 7.12 (0.280) 9 1 0.76 (0.030) FEATURES 8 2 0.51 (0.020) • Hermetically sealed ceramic surface 0.33 (0.013) Rad. 0.08 (0.003) 7 6 5 4 3 mount package 0.43 (0

 5.3. 2n5338lcc4.pdf Size:20K _upd

2N5330
2N5330

2N5339LCC4 MECHANICAL DATA Dimensions in mm (inches) NPN SILICON TRANSISTORS 9.14 (0.360) 1.27 (0.050) 8.64 (0.340) 1.07 (0.040) ≈ 2.16 (0.085) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 11 17 10 18 7.62 (0.300) 7.12 (0.280) 9 1 0.76 (0.030) FEATURES 8 2 0.51 (0.020) • Hermetically sealed ceramic surface 0.33 (0.013) Rad. 0.08 (0.003) 7 6 5 4 3 mount package 0.43 (0

5.4. 2n5336 2n5337 2n5338 2n5339.pdf Size:91K _central

2N5330

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

 5.5. 2n5335.pdf Size:11K _semelab

2N5330

2N5335 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 80V dia. IC = 3A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3 can

5.6. 2n5334.pdf Size:11K _semelab

2N5330

2N5334 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 60V dia. IC = 3A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3 can

5.7. 2n5333.pdf Size:11K _semelab

2N5330

2N5333 Dimensions in mm (inches). Bipolar PNP Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 80V dia. IC = 2A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3 can

5.8. 2n5339.pdf Size:159K _aeroflex

2N5330
2N5330

NPN Power Silicon Transistor 2N5339 Features • Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/560 • TO-39 (TO-205AD) Package Maximum Ratings Ratings Symbol Value Units Collector - Emitter Voltage VCEO 100 Vdc Collector - Base Voltage VCBO 100 Vdc Emitter - Base Voltage VEBO 6.0 Vdc Base Current IB 1.0 Adc Collector Current IC 5.0 Adc Total Power Dissipation @ TA = 2

Другие транзисторы... 2N5323Y , 2N5324 , 2N5325 , 2N5326 , 2N5327 , 2N5328 , 2N5329 , 2N533 , 2N3866 , 2N5331 , 2N5332 , 2N5333 , 2N5334 , 2N5335 , 2N5336 , 2N5336X , 2N5337 .

 

 
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