UN2217Q datasheet, аналоги, основные параметры
Наименование производителя: UN2217Q 📄📄
Маркировка: 8H
Тип материала: Si
Полярность: Pre-Biased-NPN
Встроенный резистор цепи смещения R1 = 22 kOhm
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 150 MHz
Статический коэффициент передачи тока (hFE): 160
Корпус транзистора: SOT23
SC59
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Аналоги (замена) для UN2217Q
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UN2217Q даташит
8.1. Size:104K onsemi
nsvmmun2217lt1g.pdf 
MMUN2217L, NSVMMUN2217L Digital Transistors (BRT) R1 = 4.7 kW, R2 = 10 kW NPN Transistors with Monolithic Bias http //onsemi.com Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single PIN 3 device and its external resistor bias network. The Bias Resistor COLLECTOR Transistor (BRT) contains a single transistor with a monolithic bias (OUTPU
8.2. Size:94K onsemi
mmun2217l mmun2217lt1g.pdf 
MMUN2217L, NSVMMUN2217L Digital Transistors (BRT) R1 = 4.7 kW, R2 = 10 kW NPN Transistors with Monolithic Bias http //onsemi.com Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single PIN 3 device and its external resistor bias network. The Bias Resistor COLLECTOR Transistor (BRT) contains a single transistor with a monolithic bias (OUTPU
9.1. Size:263K motorola
mun2211t.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MUN2211T1/D Bias Resistor Transistor MUN2211T1 NPN Silicon Surface Mount Transistor with SERIES Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a singl
9.2. Size:218K onsemi
nsvmun2212t1g.pdf 
MUN2211T1, SMUN2211T1, NSVMUN2211T1 Series Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http //onsemi.com This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor NPN SILICON Transistor) contains a single transistor with a monolithic bias network
9.3. Size:171K onsemi
mmun2211lt1-d.pdf 
MMUN2211LT1G Series Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single http //onsemi.com device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series
9.4. Size:160K onsemi
mun2211t1.pdf 
MUN2211T1 Series Preferred Devices Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single http //onsemi.com device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two re
9.7. Size:135K onsemi
mun2214 mmun2214l mun5214 dtc114ye dtc114ym3 nsbc114yf3.pdf 
MUN2214, MMUN2214L, MUN5214, DTC114YE, DTC114YM3, NSBC114YF3 Digital Transistors (BRT) R1 = 10 kW, R2 = 47 kW www.onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (BRT
9.8. Size:155K onsemi
nsvmmun2212lt1g.pdf 
MUN2212, MMUN2212L, MUN5212, DTC124EE, DTC124EM3, NSBC124EF3 Digital Transistors (BRT) R1 = 22 kW, R2 = 22 kW http //onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (
9.9. Size:139K onsemi
mun2211jt1g.pdf 
MUN2211, MMUN2211L, MUN5211, DTC114EE, DTC114EM3, NSBC114EF3 Digital Transistors (BRT) R1 = 10 kW, R2 = 10 kW http //onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (
9.10. Size:427K panasonic
unr221x un221x series.pdf 
Transistors with built-in Resistor UNR221x Series (UN221x Series) Silicon NPN epitaxial planar transistor Unit mm 0.40+0.10 0.05 For digital circuits 0.16+0.10 0.06 3 Features Costs can be reduced through downsizing of the equipment and reduction of the number of parts. 1 2 Mini type package allowing easy automatic insertion through tape (0.95) (0.95) packing
9.11. Size:441K wietron
mmun2211.pdf 
MMUN2211 Series COLLECTOR 3 Bias Resistor Transistor 3 BASE R1 NPN Silicon 1 R2 1 2 P b Lead(Pb)-Free 2 EMITTER SOT-23 MAXIMUM RATINGS Rating Symbol Value Unit 50 Vdc Collector-Emitter Voltage VCEO Collector-Base Voltage 50 Vdc VCBO Collector Current-Continuous I 100 mAdc C THERMAL CHARACTERISTICS Characteristics Symbol Value Unit Total Device Dissipation FR-5 Board (1
9.13. Size:391K tysemi
kmun2214.pdf 
s s SMD Type Transsiisttorrs SMD Transs iis ttoCs SMD Type Tran Iorr SMDType Tra n IC SMD Type SMD Type SMD Type o Type Product specification KMUN221 4 SOT-23 Unit mm Features +0.1 2.9-0.1 +0.1 0.4-0.1 Simplifies Circuit Design 3 Reduces Board Space Reduces Component Count 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 PIN 3 COLLECTOR PIN 1 R1 (
9.14. Size:1951K kexin
mun2211-34.pdf 
SMD Type Transistors NPN Transistors MUN2211 MUN2234 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=50V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 PIN3 Collector PIN1 R1 (Output) base 1.Base (Input) R2 2.Emitter PIN2 3.collector Emitter (Ground) Absolute Maximum
9.16. Size:1037K cn cbi
mmun2211 mmun2241.pdf 
NPN Silicon Epitaxial Planar Transistor for switching and interface circuit and drive circuit applications Resistor Values Type R1 (K) R2 (K) MMUN2211 10 10 1.Base 2.Emitter 3.Collector MMUN2212 22 22 SOT-23 Plastic Package MMUN2213 47 47 MMUN2214 10 47 Collector MMUN2215 10 (Output) MMUN2216 4.7 R1 Base (Input) MMUN2230 1 1 R2 MMUN2231 2.2 2.2 Emi
Другие транзисторы: UN2213, UN2214, UN2215Q, UN2215R, UN2215S, UN2216Q, UN2216R, UN2216S, TIP42C, UN2217R, UN2217S, UN2218, UN2219, UN221D, UN221E, UN221F, UN221K
