Биполярный транзистор UN521D
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: UN521D
Маркировка: 8M
Тип материала: Si
Полярность: Pre-Biased-NPN
Встроенный резистор цепи смещения R1 = 47 kOhm
Встроенный резистор цепи смещения R2 = 10 kOhm
Соотношение сопротивлений R1/R2 = 4.7
Максимальная рассеиваемая мощность (Pc): 0.15
W
Макcимально допустимое напряжение коллектор-база (Ucb): 50
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50
V
Макcимальный постоянный ток коллектора (Ic): 0.1
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 150
MHz
Статический коэффициент передачи тока (hfe): 30
Корпус транзистора:
SOT323
SC70
Аналоги (замена) для UN521D
UN521D
Datasheet (PDF)
9.1. Size:230K motorola
mun5211t1rev2.pdf MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MUN5211T1/DBias Resistor TransistorMUN5211T1NPN Silicon Surface Mount Transistor withSERIESMonolithic Bias Resistor NetworkMotorola Preferred DevicesThis new series of digital transistors is designed to replace a single deviceand its external resistor bias network. The BRT (Bias Resistor Transistor)contains a sing
9.2. Size:179K motorola
mun5211d.pdf MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MUN5211DW1T1/DMUN5211DW1T1Dual Bias Resistor TransistorsSERIESNPN Silicon Surface Mount Transistors withMonolithic Bias Resistor NetworkMotorola Preferred DevicesThe BRT (Bias Resistor Transistor) contains a single transistor with amonolithic bias network consisting of two resistors; a series base resistor and aba
9.3. Size:89K onsemi
nsvmun5215dw1t1g.pdf MUN5215DW1,NSBC114TDXV6,NSBC114TDP6Dual NPN Bias ResistorTransistorshttp://onsemi.comR1 = 10 kW, R2 = 8 kWPIN CONNECTIONSNPN Transistors with Monolithic BiasResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singleR1 R2device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with
9.4. Size:191K onsemi
nsvmun5212dw1t1g.pdf MUN5211DW1T1G,SMUN5211DW1T1G,NSVMUN5211DW1T1G SeriesDual Bias ResistorTransistorshttp://onsemi.comNPN Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThe Bias Resistor Transistor (BRT) contains a single transistor withSOT-363a monolithic bias network consisting of two resistors; a series base CASE 419BSTYLE 1resistor and a base-emitter resistor. The
9.5. Size:89K onsemi
nsvmun5211dw1t3g.pdf MUN5211DW1,NSBC114EDXV6,NSBC114EDP6Dual NPN Bias ResistorTransistorshttp://onsemi.comR1 = 10 kW, R2 = 10 kWNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single transistor wit
9.6. Size:90K onsemi
nsvmun5214dw1t3g.pdf MUN5214DW1,NSBC114YDXV6,NSBC114YDP6Dual NPN Bias ResistorTransistorshttp://onsemi.comR1 = 10 kW, R2 = 47 kWNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single transistor wit
9.8. Size:89K onsemi
nsvmun5213dw1t3g.pdf MUN5213DW1,NSBC144EDXV6,NSBC144EDP6Dual NPN Bias ResistorTransistorshttp://onsemi.comR1 = 47 kW, R2 = 47 kWNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single transistor wit
9.10. Size:135K onsemi
mun2214 mmun2214l mun5214 dtc114ye dtc114ym3 nsbc114yf3.pdf MUN2214, MMUN2214L,MUN5214, DTC114YE,DTC114YM3, NSBC114YF3Digital Transistors (BRT)R1 = 10 kW, R2 = 47 kWwww.onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (BRT
9.11. Size:435K onsemi
mun5211t1-d.pdf MUN5211T1G SeriesBias Resistor TransistorNPN Silicon Surface Mount Transistorwith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias Resistorhttp://onsemi.comTransistor) contains a single transistor with a monolithic bias networkconsisting of two resistors; a series ba
9.12. Size:210K onsemi
mun5211dw1t1.pdf MUN5211DW1T1G SeriesPreferred DevicesDual Bias ResistorTransistorsNPN Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThe Bias Resistor Transistor (BRT) contains a single transistor withhttp://onsemi.coma monolithic bias network consisting of two resistors; a series baseresistor and a base-emitter resistor. These digital transistors are(3) (2) (1)desi
9.13. Size:430K panasonic
unr521x un521x series.pdf Transistors with built-in ResistorUNR521x Series (UN521x Series)Silicon NPN epitaxial planar typeUnit: mmFor digital circuits0.15+0.100.3+0.10.050.03 Features Costs can be reduced through downsizing of the equipment andreduction of the number of parts1 2 S-Mini type package, allowing automatic insertion through the tapepacking and magazine packing(
9.15. Size:553K wietron
mun5211dw.pdf MUN5211DW SeriesSurface Mount Dual Bias Resistor Transistor6 5 465NPN Silicon4R1R2Q21P b Lead(Pb)-Free2R Q123R1SOT-363(SC-88)1 2 3NPN+NPNMaximum RatingsRating Symbol Value UnitCollector-Emitter Voltage V 50 VdcCEOCollector-Base Voltage VCBO 50 VdcCollector Current IC 100 mAdcThermal CharacteristicsCharacteristics(1) Symbol Max Unit(2
9.16. Size:436K wietron
mun5211.pdf MUN5211 SeriesNPN Silicon Bias Resistor Transistor3R1P b Lead(Pb)-Free1R22SOT-323(SC-70)( T =25 C unless otherwise noted)Maximum Ratings ARating Symbol Value UnitCollector-Emitter Voltage V 50CEO VdcVdcCollector-Base Voltage VCBO 50Collector Current-Continuous IC mAdc100Thermal CharacteristicsCharacteristics Symbol Max UnitTotal Device Dissipation FR-5 Bo
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