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BFG10 Datasheet (PDF)

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DISCRETE SEMICONDUCTORSDATA SHEETBFG10; BFG10/XNPN 2 GHz RF power transistor1995 Aug 31Product specificationSupersedes data of 1995 Mar 07File under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 2 GHz RF power transistor BFG10; BFG10/XFEATURES PINNING High power gainPIN DESCRIPTION High efficiencyBFG10 (see Fig.1)handbook, 2 co

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BFG10; BFG10/XNPN 2 GHz RF power transistorRev. 05 22 November 2007 Product data sheetIMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new links asshown

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DISCRETE SEMICONDUCTORS DATA SHEETBFG10W/XUHF power transistorProduct specification 1995 Sep 22NXP Semiconductors Product specificationUHF power transistor BFG10W/XFEATURES DESCRIPTION High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin Small size discrete power amplifier lfpage4 3dual-emitter SOT343N package. 900 MHz an

0.3. Size:48K philips
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DISCRETE SEMICONDUCTORSDATA SHEETBFG10W/XUHF power transistor1995 Sep 22Product specificationFile under Discrete Semiconductors, SC14Philips Semiconductors Product specificationUHF power transistor BFG10W/XFEATURES DESCRIPTION High efficiency NPN silicon planar epitaxial transistorencapsulated in a plastic, 4-pinfpage Small size discrete power amplifier 4 3dua