BFG10 PDF and Equivalents Search

 

BFG10 Specs and Replacement

Type Designator: BFG10

SMD Transistor Code: N70

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.4 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 8 V

Maximum Emitter-Base Voltage |Veb|: 2.5 V

Maximum Collector Current |Ic max|: 0.25 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Collector Capacitance (Cc): 3 pF

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: SOT143

 BFG10 Substitution

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BFG10 datasheet

 ..1. Size:59K  philips

bfg10 bfg10x 4.pdf pdf_icon

BFG10

DISCRETE SEMICONDUCTORS DATA SHEET BFG10; BFG10/X NPN 2 GHz RF power transistor 1995 Aug 31 Product specification Supersedes data of 1995 Mar 07 File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 2 GHz RF power transistor BFG10; BFG10/X FEATURES PINNING High power gain PIN DESCRIPTION High efficiency BFG10 (see Fig.1) handbook, 2 co... See More ⇒

 0.1. Size:257K  philips

bfg10x n.pdf pdf_icon

BFG10

BFG10; BFG10/X NPN 2 GHz RF power transistor Rev. 05 22 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown ... See More ⇒

 0.2. Size:240K  philips

bfg10wx.pdf pdf_icon

BFG10

DISCRETE SEMICONDUCTORS DATA SHEET BFG10W/X UHF power transistor Product specification 1995 Sep 22 NXP Semiconductors Product specification UHF power transistor BFG10W/X FEATURES DESCRIPTION High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin Small size discrete power amplifier lfpage 4 3 dual-emitter SOT343N package. 900 MHz an... See More ⇒

 0.3. Size:48K  philips

bfg10wx 1.pdf pdf_icon

BFG10

DISCRETE SEMICONDUCTORS DATA SHEET BFG10W/X UHF power transistor 1995 Sep 22 Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification UHF power transistor BFG10W/X FEATURES DESCRIPTION High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin fpage Small size discrete power amplifier 4 3 dua... See More ⇒

Detailed specifications: BCV64B , BCV65 , BDL31 , BDL32 , BDP31 , BDP32 , BFE505 , BFE520 , BD136 , BFG10W-X , BFG11 , BFG11-X , BFG11W-X , BFG21W , 2SB1366F-O , BFG31 , BFG403W .

History: MJH11018 | 2SB1205S-TL-E | 2SB1216T-TL-E

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