All Transistors. BFG10 Datasheet

 

BFG10 Datasheet and Replacement


   Type Designator: BFG10
   SMD Transistor Code: N70
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.4 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 8 V
   Maximum Emitter-Base Voltage |Veb|: 2.5 V
   Maximum Collector Current |Ic max|: 0.25 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: SOT143
 

 BFG10 Substitution

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BFG10 Datasheet (PDF)

 ..1. Size:59K  philips
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BFG10

DISCRETE SEMICONDUCTORSDATA SHEETBFG10; BFG10/XNPN 2 GHz RF power transistor1995 Aug 31Product specificationSupersedes data of 1995 Mar 07File under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 2 GHz RF power transistor BFG10; BFG10/XFEATURES PINNING High power gainPIN DESCRIPTION High efficiencyBFG10 (see Fig.1)handbook, 2 co

 0.1. Size:257K  philips
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BFG10

BFG10; BFG10/XNPN 2 GHz RF power transistorRev. 05 22 November 2007 Product data sheetIMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new links asshown

 0.2. Size:240K  philips
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BFG10

DISCRETE SEMICONDUCTORS DATA SHEETBFG10W/XUHF power transistorProduct specification 1995 Sep 22NXP Semiconductors Product specificationUHF power transistor BFG10W/XFEATURES DESCRIPTION High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin Small size discrete power amplifier lfpage4 3dual-emitter SOT343N package. 900 MHz an

 0.3. Size:48K  philips
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BFG10

DISCRETE SEMICONDUCTORSDATA SHEETBFG10W/XUHF power transistor1995 Sep 22Product specificationFile under Discrete Semiconductors, SC14Philips Semiconductors Product specificationUHF power transistor BFG10W/XFEATURES DESCRIPTION High efficiency NPN silicon planar epitaxial transistorencapsulated in a plastic, 4-pinfpage Small size discrete power amplifier 4 3dua

Datasheet: BCV64B , BCV65 , BDL31 , BDL32 , BDP31 , BDP32 , BFE505 , BFE520 , BD136 , BFG10W-X , BFG11 , BFG11-X , BFG11W-X , BFG21W , 2SB1366F-O , BFG31 , BFG403W .

Keywords - BFG10 transistor datasheet

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