HPhilips Semiconductors B.V.Report nr. : RNR-45-98-B-0703Author : T.F. Buss / J.BouwmanDate : 28-10-1998Department : Development DSC-N900 MHz Driverwith theBFG480WAbstract:This application note contains an example of a driver, designed for a frequency f=900MHz.At f=900 MHz: The output power Pout11dBm, the Noise Figure NF3.2dB, the Gain S21 16dB andthe OIP325

Philips Semiconductors 1880 MHz PA Driver with BFG480W1880 MHz PA Driver with BFG480WApplication NoteJL-9902v0AuthorJarek LucekJune 1, 1999Discrete Semiconductors - Mansfield171 Forbes Blvd.Mansfield, MA 02048AbstractBFG480W, the new 5th generation transistor from Philips Semiconductors, is well suited for PA driver applicationsin AMPS, TDMA, CDMA and GSM systems. BFG80W

Philips Semiconductors Preliminary specificationNPN wideband transistor BFG480WFEATURES PINNING High power gainPIN DESCRIPTION High efficiency1 emitter Low noise figure2 base High transition frequency3 emitter Emitter is thermal lead4 collector Low feedback capacitance Linear and non-linear operation.APPLICATIONS34handbook, halfpage RF

DISCRETE SEMICONDUCTORS DATA SHEETM3D124BFG480WNPN wideband transistorProduct specification 1998 Oct 21Supersedes data of 1998 Jul 09NXP Semiconductors Product specificationNPN wideband transistor BFG480WFEATURES PINNING High power gainPIN DESCRIPTION High efficiency1emitter Low noise figure2base High transition frequency3emitter Emitter is t