All Transistors. BFG480W Datasheet

 

BFG480W Datasheet, Equivalent, Cross Reference Search


   Type Designator: BFG480W
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.36 W
   Maximum Collector-Base Voltage |Vcb|: 14.5 V
   Maximum Collector-Emitter Voltage |Vce|: 4.5 V
   Maximum Emitter-Base Voltage |Veb|: 1 V
   Maximum Collector Current |Ic max|: 0.25 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 23000 MHz
   Collector Capacitance (Cc): 1.4 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: SOT343R

 BFG480W Transistor Equivalent Substitute - Cross-Reference Search

   

BFG480W Datasheet (PDF)

 ..1. Size:32K  philips
bfg480w 900mdrv.pdf

BFG480W
BFG480W

HPhilips Semiconductors B.V.Report nr. : RNR-45-98-B-0703Author : T.F. Buss / J.BouwmanDate : 28-10-1998Department : Development DSC-N900 MHz Driverwith theBFG480WAbstract:This application note contains an example of a driver, designed for a frequency f=900MHz.At f=900 MHz: The output power Pout11dBm, the Noise Figure NF3.2dB, the Gain S21 16dB andthe OIP325

 ..2. Size:117K  philips
bfg480w 1880drv.pdf

BFG480W
BFG480W

Philips Semiconductors 1880 MHz PA Driver with BFG480W1880 MHz PA Driver with BFG480WApplication NoteJL-9902v0AuthorJarek LucekJune 1, 1999Discrete Semiconductors - Mansfield171 Forbes Blvd.Mansfield, MA 02048AbstractBFG480W, the new 5th generation transistor from Philips Semiconductors, is well suited for PA driver applicationsin AMPS, TDMA, CDMA and GSM systems. BFG80W

 ..3. Size:139K  philips
bfg480w n 21.pdf

BFG480W
BFG480W

Philips Semiconductors Preliminary specificationNPN wideband transistor BFG480WFEATURES PINNING High power gainPIN DESCRIPTION High efficiency1 emitter Low noise figure2 base High transition frequency3 emitter Emitter is thermal lead4 collector Low feedback capacitance Linear and non-linear operation.APPLICATIONS34handbook, halfpage RF

 ..4. Size:362K  philips
bfg480w.pdf

BFG480W
BFG480W

DISCRETE SEMICONDUCTORS DATA SHEETM3D124BFG480WNPN wideband transistorProduct specification 1998 Oct 21Supersedes data of 1998 Jul 09NXP Semiconductors Product specificationNPN wideband transistor BFG480WFEATURES PINNING High power gainPIN DESCRIPTION High efficiency1emitter Low noise figure2base High transition frequency3emitter Emitter is t

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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