BFG480W Specs and Replacement

Type Designator: BFG480W

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.36 W

Maximum Collector-Base Voltage |Vcb|: 14.5 V

Maximum Collector-Emitter Voltage |Vce|: 4.5 V

Maximum Emitter-Base Voltage |Veb|: 1 V

Maximum Collector Current |Ic max|: 0.25 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 23000 MHz

Collector Capacitance (Cc): 1.4 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: SOT343R

 BFG480W Substitution

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BFG480W datasheet

 ..1. Size:32K  philips

bfg480w 900mdrv.pdf pdf_icon

BFG480W

H Philips Semiconductors B.V. Report nr. RNR-45-98-B-0703 Author T.F. Buss / J.Bouwman Date 28-10-1998 Department Development DSC-N 900 MHz Driver with the BFG480W Abstract This application note contains an example of a driver, designed for a frequency f=900MHz. At f=900 MHz The output power Pout 11dBm, the Noise Figure NF 3.2dB, the Gain S21 16dB and the OIP3 25... See More ⇒

 ..2. Size:117K  philips

bfg480w 1880drv.pdf pdf_icon

BFG480W

Philips Semiconductors 1880 MHz PA Driver with BFG480W 1880 MHz PA Driver with BFG480W Application Note JL-9902v0 Author Jarek Lucek June 1, 1999 Discrete Semiconductors - Mansfield 171 Forbes Blvd. Mansfield, MA 02048 Abstract BFG480W, the new 5th generation transistor from Philips Semiconductors, is well suited for PA driver applications in AMPS, TDMA, CDMA and GSM systems. BFG80W... See More ⇒

 ..3. Size:139K  philips

bfg480w n 21.pdf pdf_icon

BFG480W

Philips Semiconductors Preliminary specification NPN wideband transistor BFG480W FEATURES PINNING High power gain PIN DESCRIPTION High efficiency 1 emitter Low noise figure 2 base High transition frequency 3 emitter Emitter is thermal lead 4 collector Low feedback capacitance Linear and non-linear operation. APPLICATIONS 34 handbook, halfpage RF... See More ⇒

 ..4. Size:362K  philips

bfg480w.pdf pdf_icon

BFG480W

DISCRETE SEMICONDUCTORS DATA SHEET M3D124 BFG480W NPN wideband transistor Product specification 1998 Oct 21 Supersedes data of 1998 Jul 09 NXP Semiconductors Product specification NPN wideband transistor BFG480W FEATURES PINNING High power gain PIN DESCRIPTION High efficiency 1emitter Low noise figure 2base High transition frequency 3emitter Emitter is t... See More ⇒

Detailed specifications: BFG425W, BFG505, BFG505W, BFG520, BFG520W, BFG590, BFG590W, BFG591, 2N5401, BFM505, BFM520, BFQ131, BFQ151, BFQ166, BFQ256, BFQ256A, BFR520

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