Биполярный транзистор BU2522DF - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BU2522DF
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 45 W
Макcимально допустимое напряжение коллектор-база (Ucb): 800 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 800 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 13.5 V
Макcимальный постоянный ток коллектора (Ic): 10 A
Предельная температура PN-перехода (Tj): 150 °C
Ёмкость коллекторного перехода (Cc): 115 pf
Статический коэффициент передачи тока (hfe): 13
Корпус транзистора: SOT199
BU2522DF Datasheet (PDF)
bu2522df 1.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522DF GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plasticfull-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improvedRBSOA performance and is suitable for use in horizontal d
bu2522df.pdf
isc Silicon NPN Power Transistor BU2522DFDESCRIPTIONHigh Switching SpeedHigh VoltageBuilt-in Ddamper DdiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofhigh resolution monitors.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol
bu2522dx 1.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522DX GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plasticfull-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improvedRBSOA performance and is suitable for use in horizontal d
bu2522aw 1.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522AW GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use inhorizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable foruse in horizontal deflection circuits of pc monitors.QUI
bu2522a 1.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522A GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use inhorizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable foroperation up to 64 kHz.QUICK REFERENCE DATASYMBOL PARAM
bu2522af.pdf
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bu2522ax.pdf
isc Silicon NPN Power Transistor BU2522AXDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of pcmonitors.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collec
bu2522af.pdf
isc Silicon NPN Power Transistor BU2522AFDESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofhigh resolution monitors.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VA
bu2522a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU2522A DESCRIPTION With TO-3PN package High voltage High speed switching APPLICATIONS For use in horizontal deflection circuits of high resolution monitors. PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=25
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