BU2522DF Datasheet. Specs and Replacement

Type Designator: BU2522DF  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 45 W

Maximum Collector-Base Voltage |Vcb|: 800 V

Maximum Collector-Emitter Voltage |Vce|: 800 V

Maximum Emitter-Base Voltage |Veb|: 13.5 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Collector Capacitance (Cc): 115 pF

Forward Current Transfer Ratio (hFE), MIN: 13

Noise Figure, dB: -

Package: SOT199

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BU2522DF datasheet

 ..1. Size:62K  philips

bu2522df 1.pdf pdf_icon

BU2522DF

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522DF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for use in horizontal d... See More ⇒

 ..2. Size:213K  inchange semiconductor

bu2522df.pdf pdf_icon

BU2522DF

isc Silicon NPN Power Transistor BU2522DF DESCRIPTION High Switching Speed High Voltage Built-in Ddamper Ddiode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of high resolution monitors. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vol... See More ⇒

 7.1. Size:63K  philips

bu2522dx 1.pdf pdf_icon

BU2522DF

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522DX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for use in horizontal d... See More ⇒

 8.1. Size:58K  philips

bu2522aw 1.pdf pdf_icon

BU2522DF

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522AW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for use in horizontal deflection circuits of pc monitors. QUI... See More ⇒

Detailed specifications: BRY61, BRY62, BU1506DX, BU1507AX, BU1507DX, BU2507DF, BU2515AF, BU2515DF, 2SC2655, BU2522DX, BU2523DF, BU2523DX, BU2525DF, BU2525DW, BU2525DX, BU2527DF, 2DA2018

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