ZXTP2006E6 - описание и поиск аналогов

ZXTP2006E6 20V PNP LOW SAT MEDIUM POWER TRANSISTOR IN SOT23-6 SUMMARY BVCEO = -20V RSAT = 31m ; IC = -3.5A DESCRIPTION Packaged in the SOT23-6 outline this new low saturation 20V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. FEATURES SOT23-6 3.5 Amps continuous current Extre

ZXTP2009Z 40V PNP HIGH GAIN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -40V RSAT = 29m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 40V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line switching and various driving and power management functions. FEATURES SOT89 Extremely low equivale

Green ZXTP2008Z 30V PNP LOW SATURATION MEDIUM POWER TRANSISTOR Features Mechanical Data BVCEO > -30V Case SOT89 IC = -5.5A Continuous Collector Current Case Material Molded Plastic. Green Molding Compound. ICM = -20A Peak Pulse Current UL Flammability Rating 94V-0 Low Saturation Voltage VCE(SAT)

ZXTP2008G Green 30V PNP LOW SATURATION TRANSISTOR IN SOT223 Features Mechanical Data BVCEO > -30V Case SOT223 IC = -5.5A Continuous Collector Current Case Material Molded Plastic. Green Molding Compound. ICM = -20A Peak Pulse Current UL Flammability Rating 94V-0 Low Saturation Voltage VCE(SAT)

ZXTP2009ZQ 40V PNP HIGH GAIN LOW SATURATION MEDIUM POWER TRANSISTOR Description Mechanical Data This bipolar junction transistor (BJT) is designed to meet the stringent Case SOT89 requirement of automotive applications. Case Material Molded Plastic. Green Molding Compound. UL Flammability Rating 94V-0 Moisture Sensitivity Level 1 per J-STD-020 Terminals F