MMDT5551 DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-363 Complementary PNP Type Available (MMDT5401) C2 B1 E1Dim Min Max Ideal for Medium Power Amplification and Switching A 0.10 0.30 B C Ultra-Small Surface Mount Package B 1.15 1.35 Lead Free/RoHS Compliant (Note 3) E2 B2 C1C 2.00 2.20 "Gr

MCCTMMicro Commercial Components20736 Marilla Street ChatsworthMicro Commercial Components MMDT5551CA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Plastic-Encapsulate Moisure Sensitivity Level 1Transistors C

J C ET DUAL TRANSISTOR (NPN+NPN) 6 54 Epitaxial Planar Die Construction Complementary PNP Type Available(MMDT5401) 12 Ideal for Medium Power Amplification and Switching 3

MMDT5551 Dual Transistor (NPN/PNP)SOT-363Features Epitaxial Planar Die Construction Complementary PNP Type Available(MMDT5401) Ideal for Medium Power Amplification and Switching MRKING:K4N MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO Collector- Base Voltage 180 V VCEO Collector-Emitter Voltage

SMD Type TransistorsNPN TransistorsMMDT5551 (KMDT5551) Features Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Dual Transistors (NPN+NPN) Complementary PNP Type Available(MMDT5401) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 180 Collector - Emitter Voltage VCEO 160

RoHS COMPLIANT MMDT5551Dual NPN Small Signal Transistor Features Epoxy meets UL-94 V-0 flammability rating Surface mount package ideally Suited for Automatic Insertion NPN Mechanical Data ackage: SOT-363P Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 Marking:K4N Equivalent circuit 1 / 5 S-S3209 Yangzhou

MMDT5551DW DUAL TRANSISTOR (NPN+NPN) 6 54 Epitaxial Planar Die Construction Complementary PNP Type Available(MMDT5401)12 Ideal for Medium Power Amplification and Switching3 G1

MMDT5401 150V DUAL PNP SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data Epitaxial Planar Die Construction Case: SOT363 Complementary NPN Type Available (MMDT5551) Case Material: Molded Plastic, Green Molding Compound, Ideal for Medium Power Amplification and Switching UL Flammability Classification Rating 94V-0 Ultra-Small Surface Mount Packag

MMDT5451 COMPLEMENTARY NPN / PNP SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data Epitaxial Planar Die Construction Case: SOT363 Complementary Pair: 1 5551 Type NPN Case Material: Molded Plastic, Green Molding Compound, 1 5401 Type PNP UL Flammability Classification Rating 94V-0 Ideal for Medium Power Amplification and Switching Moisture Sens

MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMMDT5401Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Marking:K4MPlastic-Encapsulate Ideal for Low Power Amplification and Switching Ultra-small Surface M

MMDT5401Plastic-EncapsulateElektronische BauelementeMulti-Chip (PNP+PNP) TransistorRoHS Compliant ProductSOT-363o.055(1.40)8.047(1.20)0o .026TYPFeatures(0.65TYP) .021REF(0.525)REF* Epitaxial Planar Die Construction.053(1.35)* Complementary NPN Type Available (MMDT5551) .096(2.45).045(1.15).085(2.15).018(0.46).010(0.26)C2 B1 E1.014(0.35).006(0.15

MMDT5451 0.2 W, 200 mA, 180 V Plastic-Encapsulated Transistor (Dual) Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-363 FEATURES DUAL TRANSISTOR (NPN+PNP) A Epitaxial Planar Die Construction EL Ideal for low Power Amplification and Switching One 5551(NPN), one 5401(PNP) BMARKING : KNM FC HJD G K

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT5401 DUAL TRANSISTOR (PNP+PNP) SOT-363 FEATURES Epitaxial Planar Die Construction Complementary NPN Type Available(MMDT 5551) Ideal for Medium Power Amplification and Switching MRKING:K4M MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT5451 DUAL TRANSISTOR (NPN+PNP) 6FEATURES 54 Epitaxial Planar Die Construction Ideal for low Power Amplification and Switching12 One 5551(NPN), one 5401(PNP)3MRKING:KNM MAXI

MMDT5401 Dual Transistor (NPN/PNP)SOT-363Features Epitaxial Planar Die Construction Complementary NPN Type Available(MMDT 5551) Ideal for Medium Power Amplification and Switching MRKING:K4M MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO Collector- Base Voltage -160 V VCEO Collector-Emitter Vol

SMD Type TransistorsPNP TransistorsMMDT5401 (KMDT5401) Features Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Dual Transistors (PNP+PNP) Complementary NPN Type Available(MMDT 5551) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -160 Collector - Emitter Voltage VCEO -

RoHS COMPLIANT MMDT5401Dual PNP Small Signal Transistor Features Epoxy meets UL-94 V-0 flammability rating Surface mount package ideally Suited for Automatic Insertion PNP Mechanical Data ackage: SOT-363P Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 Marking:K4M Equivalent circuit 1 / 5 S-S3208 Yangzhou

Plastic-Encapsulate TransistorsSOT-363DUAL TRANSISTOR (PNP+PNP) FEATURES Complementary to MMDT5551DW Small Surface Mount Package Ideal for Medium Power Amplificationand Switching MARKING:2L MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -160 V CBOV Collector-Emitter Voltage -150 V CEOV Emitter-Base Vo