MMDT5551 Specs and Replacement
Type Designator: MMDT5551
SMD Transistor Code: K4N
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Collector Current |Ic max|: 0.2 A
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SOT363
- BJT ⓘ Cross-Reference Search
MMDT5551 datasheet
..1. Size:174K diodes
mmdt5551.pdf 
MMDT5551 DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-363 Complementary PNP Type Available (MMDT5401) C2 B1 E1 Dim Min Max Ideal for Medium Power Amplification and Switching A 0.10 0.30 B C Ultra-Small Surface Mount Package B 1.15 1.35 Lead Free/RoHS Compliant (Note 3) E2 B2 C1 C 2.00 2.20 "Gr... See More ⇒
..2. Size:210K mcc
mmdt5551 sot-363.pdf
MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components MMDT5551 CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Plastic-Encapsulate Moisure Sensitivity Level 1 Transistors C... See More ⇒
..3. Size:277K jiangsu
mmdt5551.pdf
J C ET DUAL TRANSISTOR (NPN+NPN) 6 5 4 Epitaxial Planar Die Construction Complementary PNP Type Available(MMDT5401) 1 2 Ideal for Medium Power Amplification and Switching 3 ... See More ⇒
..4. Size:239K lge
mmdt5551.pdf
MMDT5551 Dual Transistor (NPN/PNP) SOT-363 Features Epitaxial Planar Die Construction Complementary PNP Type Available(MMDT5401) Ideal for Medium Power Amplification and Switching MRKING K4N MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector- Base Voltage 180 V VCEO Collector-Emitter Voltage... See More ⇒
..5. Size:1137K kexin
mmdt5551.pdf
SMD Type Transistors NPN Transistors MMDT5551 (KMDT5551) Features Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Dual Transistors (NPN+NPN) Complementary PNP Type Available(MMDT5401) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 180 Collector - Emitter Voltage VCEO 160... See More ⇒
..7. Size:365K cn yangzhou yangjie elec
mmdt5551.pdf
RoHS COMPLIANT MMDT5551 Dual NPN Small Signal Transistor Features Epoxy meets UL-94 V-0 flammability rating Surface mount package ideally Suited for Automatic Insertion NPN Mechanical Data ackage SOT-363 P Terminals Tin plated leads, solderable per J-STD-002 and JESD22-B102 Marking K4N Equivalent circuit 1 / 5 S-S3209 Yangzhou... See More ⇒
0.1. Size:437K cn cbi
mmdt5551dw.pdf
MMDT5551DW DUAL TRANSISTOR (NPN+NPN) 6 5 4 Epitaxial Planar Die Construction Complementary PNP Type Available(MMDT5401) 1 2 Ideal for Medium Power Amplification and Switching 3 G1 ... See More ⇒
9.1. Size:374K diodes
mmdt5401.pdf
MMDT5401 150V DUAL PNP SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data Epitaxial Planar Die Construction Case SOT363 Complementary NPN Type Available (MMDT5551) Case Material Molded Plastic, Green Molding Compound, Ideal for Medium Power Amplification and Switching UL Flammability Classification Rating 94V-0 Ultra-Small Surface Mount Packag... See More ⇒
9.2. Size:781K diodes
mmdt5451.pdf
MMDT5451 COMPLEMENTARY NPN / PNP SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data Epitaxial Planar Die Construction Case SOT363 Complementary Pair 1 5551 Type NPN Case Material Molded Plastic, Green Molding Compound, 1 5401 Type PNP UL Flammability Classification Rating 94V-0 Ideal for Medium Power Amplification and Switching Moisture Sens... See More ⇒
9.3. Size:225K mcc
mmdt5401 sot-363.pdf
MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth MMDT5401 Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Marking K4M Plastic-Encapsulate Ideal for Low Power Amplification and Switching Ultra-small Surface M... See More ⇒
9.4. Size:527K secos
mmdt5401.pdf
MMDT5401 Plastic-Encapsulate Elektronische Bauelemente Multi-Chip (PNP+PNP) Transistor RoHS Compliant Product SOT-363 o .055(1.40) 8 .047(1.20) 0o .026TYP Features (0.65TYP) .021REF (0.525)REF * Epitaxial Planar Die Construction .053(1.35) * Complementary NPN Type Available (MMDT5551) .096(2.45) .045(1.15) .085(2.15) .018(0.46) .010(0.26) C2 B1 E1 .014(0.35) .006(0.15... See More ⇒
9.5. Size:432K secos
mmdt5451.pdf
MMDT5451 0.2 W, 200 mA, 180 V Plastic-Encapsulated Transistor (Dual) Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-363 FEATURES DUAL TRANSISTOR (NPN+PNP) A Epitaxial Planar Die Construction E L Ideal for low Power Amplification and Switching One 5551(NPN), one 5401(PNP) B MARKING KNM F C H J D G K ... See More ⇒
9.6. Size:4388K jiangsu
mmdt5401.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT5401 DUAL TRANSISTOR (PNP+PNP) SOT-363 FEATURES Epitaxial Planar Die Construction Complementary NPN Type Available(MMDT 5551) Ideal for Medium Power Amplification and Switching MRKING K4M MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO... See More ⇒
9.7. Size:989K jiangsu
mmdt5451.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT5451 DUAL TRANSISTOR (NPN+PNP) 6 FEATURES 5 4 Epitaxial Planar Die Construction Ideal for low Power Amplification and Switching 1 2 One 5551(NPN), one 5401(PNP) 3 MRKING KNM MAXI... See More ⇒
9.8. Size:194K lge
mmdt5401.pdf
MMDT5401 Dual Transistor (NPN/PNP) SOT-363 Features Epitaxial Planar Die Construction Complementary NPN Type Available(MMDT 5551) Ideal for Medium Power Amplification and Switching MRKING K4M MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector- Base Voltage -160 V VCEO Collector-Emitter Vol... See More ⇒
9.9. Size:385K kexin
mmdt5401.pdf
SMD Type Transistors PNP Transistors MMDT5401 (KMDT5401) Features Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Dual Transistors (PNP+PNP) Complementary NPN Type Available(MMDT 5551) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -160 Collector - Emitter Voltage VCEO -... See More ⇒
9.10. Size:367K cn yangzhou yangjie elec
mmdt5401.pdf
RoHS COMPLIANT MMDT5401 Dual PNP Small Signal Transistor Features Epoxy meets UL-94 V-0 flammability rating Surface mount package ideally Suited for Automatic Insertion PNP Mechanical Data ackage SOT-363 P Terminals Tin plated leads, solderable per J-STD-002 and JESD22-B102 Marking K4M Equivalent circuit 1 / 5 S-S3208 Yangzhou... See More ⇒
9.11. Size:1319K cn cbi
mmdt5401dw.pdf
Plastic-Encapsulate Transistors SOT-363 DUAL TRANSISTOR (PNP+PNP) FEATURES Complementary to MMDT5551DW Small Surface Mount Package Ideal for Medium Power Amplificationand Switching MARKING 2L MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -160 V CBO V Collector-Emitter Voltage -150 V CEO V Emitter-Base Vo... See More ⇒
Detailed specifications: 2SB1477, FZT458, FZT558, FZT560, FZTA42, IMX8, MMDT5401, MMDT5451, BD140, MMDTA42, MMST5401, MMST5551, MMSTA42, MMSTA92, ZDT694, ZDT795A, ZTX560
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