Биполярный транзистор MMST5551
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: MMST5551
Маркировка: K4N
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.2
W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 160
V
Макcимальный постоянный ток коллектора (Ic): 0.2
A
Граничная частота коэффициента передачи тока (ft): 100
MHz
Статический коэффициент передачи тока (hfe): 80
Корпус транзистора:
SOT323
Аналоги (замена) для MMST5551
MMST5551
Datasheet (PDF)
..1. Size:184K diodes
mmst5551.pdf 
MMST5551180V NPN SMALL SIGNAL TRANSISTOR IN SOT323 Features Mechanical Data Epitaxial Planar Die Construction Case: SOT323 Ultra-Small Surface Mount Package Case Material: Molded Plastic. Green Molding Compound. Complementary NPN Type: MMST5401 UL Flammability Rating 94V-0 Ideal for Low Power Amplification and Switching Moisture Sensitivity: Level 1
..2. Size:770K mcc
mmst5551.pdf 
MMST5551Features Halogen Free Available Upon Request By Adding Suffix "-HF" Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating NPN Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSSmall Signal Compliant. See Ordering Information)TransistorMaximum RatingsSOT-323 Operating Junction Temperature Range: -55 to +150 Storage
..3. Size:1528K jiangsu
mmst5551.pdf 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-323 Plastic-Encapsulate Transistors MMST5551 TRANSISTOR (NPN) SOT323 FEATURES Complementary to MMST5401 Small Surface Mount Package Ideal for Medium Power Amplification and Switching MARKING:K4N 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter
..4. Size:361K htsemi
mmst5551.pdf 
MMST5551TRANSISTOR(NPN)SOT323 FEATURES Complementary to MMST5401 Small Surface Mount Package Ideal for Medium Power Amplification and Switching MARKING:K4N 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit V Collector-Base Voltage 180 V CBOV Collector-Emitter Voltage 160 V CEOV Emitter-
..5. Size:336K kexin
mmst5551.pdf 
SMD Type TransistorsNPN TransistorsMMST5551 (KMST5551) Features Small Surface Mount Package Ideal for Medium Power Amplification and Switching Complementary to MMST54011.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 180 Collector - Emitter Voltage VCEO 160 V Emitter - Base Volt
..6. Size:321K cn yangzhou yangjie elec
mmst5551.pdf 
RoHS COMPLIANT MMST5551 NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisure Sensitivity Level 1 Marking:K4N Maximum Rantings (Ta=25) Item Symbol Unit Conditions Value Collector-Emitter Voltage* VCEO V IC=1.0mAdc, IB=0 160 Collector-Base Voltage VCBO V IC
9.1. Size:70K diodes
mmst5401.pdf 
SPICE MODEL: MMST5401MMST5401PNP SMALL SIGNAL SURFACE MOUNT TRANSISTORFeatures Epitaxial Planar Die ConstructionSOT-323 Complementary NPN Type Available (MMST5551)ADim Min Max Ideal for Medium Power Amplification and SwitchingC A0.25 0.40 Ultra-Small Surface Mount PackageB1.15 1.35B C Available in Lead Free/RoHS Compliant Version (Note 2)C2.00 2.20B ED0
9.2. Size:183K mcc
mmst5401.pdf 
MCCTMMicro Commercial Components20736 Marilla Street ChatsworthMMST5401Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Power dissipation: 200mW (Tamb=25 )PNP Small Signal Collector current: -0.2A Marking : K4M Transistors Operating and Storage junction temperature range -55 to + 150 Lead Free Finish/RoHS
9.3. Size:1514K jiangsu
mmst5401.pdf 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-323 Plastic-Encapsulate Transistors MMST5401 TRANSISTOR (PNP) SOT323 FEATURES Complementary to MMST5551 Small Surface Mount Package Ideal for Medium Power Amplificationand Switching MARKING:K4M 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter
9.4. Size:359K htsemi
mmst5401.pdf 
MMST5401TRANSISTOR(PNP)SOT323 FEATURES Complementary to MMST5551 Small Surface Mount Package Ideal for Medium Power Amplificationand Switching MARKING:K4M 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit V Collector-Base Voltage -160 V CBOV Collector-Emitter Voltage -150 V CEOV Emitter
9.5. Size:329K kexin
mmst5401.pdf 
SMD Type TransistorsPNP TransistorsMMST5401 (KMST5401) Features Small Surface Mount Package Ideal for Medium Power Amplificationand Switching Complementary to MMST55511.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -160 Collector - Emitter Voltage VCEO -150 V Emitter - Base Vol
9.6. Size:322K cn yangzhou yangjie elec
mmst5401.pdf 
RoHS COMPLIANT MMST5401 PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisure Sensitivity Level 1 Marking:K4M Maximum Rantings (Ta=25) Item Symbol Unit Conditions Value Collector-Emitter Voltage* VCEO V IC=-1.0mAdc, IB=0 -150 Collector-Base Voltage VCBO
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