All Transistors. MMST5551 Datasheet

 

MMST5551 Datasheet, Equivalent, Cross Reference Search


   Type Designator: MMST5551
   SMD Transistor Code: K4N
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Emitter Voltage |Vce|: 160 V
   Maximum Collector Current |Ic max|: 0.2 A
   Transition Frequency (ft): 100 MHz
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SOT323

 MMST5551 Transistor Equivalent Substitute - Cross-Reference Search

   

MMST5551 Datasheet (PDF)

 ..1. Size:184K  diodes
mmst5551.pdf

MMST5551
MMST5551

MMST5551180V NPN SMALL SIGNAL TRANSISTOR IN SOT323 Features Mechanical Data Epitaxial Planar Die Construction Case: SOT323 Ultra-Small Surface Mount Package Case Material: Molded Plastic. Green Molding Compound. Complementary NPN Type: MMST5401 UL Flammability Rating 94V-0 Ideal for Low Power Amplification and Switching Moisture Sensitivity: Level 1

 ..2. Size:770K  mcc
mmst5551.pdf

MMST5551
MMST5551

MMST5551Features Halogen Free Available Upon Request By Adding Suffix "-HF" Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating NPN Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSSmall Signal Compliant. See Ordering Information)TransistorMaximum RatingsSOT-323 Operating Junction Temperature Range: -55 to +150 Storage

 ..3. Size:1528K  jiangsu
mmst5551.pdf

MMST5551
MMST5551

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-323 Plastic-Encapsulate Transistors MMST5551 TRANSISTOR (NPN) SOT323 FEATURES Complementary to MMST5401 Small Surface Mount Package Ideal for Medium Power Amplification and Switching MARKING:K4N 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter

 ..4. Size:361K  htsemi
mmst5551.pdf

MMST5551

MMST5551TRANSISTOR(NPN)SOT323 FEATURES Complementary to MMST5401 Small Surface Mount Package Ideal for Medium Power Amplification and Switching MARKING:K4N 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit V Collector-Base Voltage 180 V CBOV Collector-Emitter Voltage 160 V CEOV Emitter-

 ..5. Size:336K  kexin
mmst5551.pdf

MMST5551

SMD Type TransistorsNPN TransistorsMMST5551 (KMST5551) Features Small Surface Mount Package Ideal for Medium Power Amplification and Switching Complementary to MMST54011.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 180 Collector - Emitter Voltage VCEO 160 V Emitter - Base Volt

 ..6. Size:321K  cn yangzhou yangjie elec
mmst5551.pdf

MMST5551
MMST5551

RoHS COMPLIANT MMST5551 NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisure Sensitivity Level 1 Marking:K4N Maximum Rantings (Ta=25) Item Symbol Unit Conditions Value Collector-Emitter Voltage* VCEO V IC=1.0mAdc, IB=0 160 Collector-Base Voltage VCBO V IC

 9.1. Size:70K  diodes
mmst5401.pdf

MMST5551
MMST5551

SPICE MODEL: MMST5401MMST5401PNP SMALL SIGNAL SURFACE MOUNT TRANSISTORFeatures Epitaxial Planar Die ConstructionSOT-323 Complementary NPN Type Available (MMST5551)ADim Min Max Ideal for Medium Power Amplification and SwitchingC A0.25 0.40 Ultra-Small Surface Mount PackageB1.15 1.35B C Available in Lead Free/RoHS Compliant Version (Note 2)C2.00 2.20B ED0

 9.2. Size:183K  mcc
mmst5401.pdf

MMST5551
MMST5551

MCCTMMicro Commercial Components20736 Marilla Street ChatsworthMMST5401Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Power dissipation: 200mW (Tamb=25 )PNP Small Signal Collector current: -0.2A Marking : K4M Transistors Operating and Storage junction temperature range -55 to + 150 Lead Free Finish/RoHS

 9.3. Size:1514K  jiangsu
mmst5401.pdf

MMST5551
MMST5551

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-323 Plastic-Encapsulate Transistors MMST5401 TRANSISTOR (PNP) SOT323 FEATURES Complementary to MMST5551 Small Surface Mount Package Ideal for Medium Power Amplificationand Switching MARKING:K4M 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter

 9.4. Size:359K  htsemi
mmst5401.pdf

MMST5551

MMST5401TRANSISTOR(PNP)SOT323 FEATURES Complementary to MMST5551 Small Surface Mount Package Ideal for Medium Power Amplificationand Switching MARKING:K4M 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit V Collector-Base Voltage -160 V CBOV Collector-Emitter Voltage -150 V CEOV Emitter

 9.5. Size:329K  kexin
mmst5401.pdf

MMST5551

SMD Type TransistorsPNP TransistorsMMST5401 (KMST5401) Features Small Surface Mount Package Ideal for Medium Power Amplificationand Switching Complementary to MMST55511.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -160 Collector - Emitter Voltage VCEO -150 V Emitter - Base Vol

 9.6. Size:322K  cn yangzhou yangjie elec
mmst5401.pdf

MMST5551
MMST5551

RoHS COMPLIANT MMST5401 PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisure Sensitivity Level 1 Marking:K4M Maximum Rantings (Ta=25) Item Symbol Unit Conditions Value Collector-Emitter Voltage* VCEO V IC=-1.0mAdc, IB=0 -150 Collector-Base Voltage VCBO

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

 

 
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