KSC5502DT - описание и поиск аналогов

 

KSC5502DT - Аналоги. Основные параметры


   Наименование производителя: KSC5502DT
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 50 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 1200 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 600 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 12 V
   Макcимальный постоянный ток коллектора (Ic): 2 A
   Статический коэффициент передачи тока (hfe): 15
   Корпус транзистора: TO220

 Аналоги (замена) для KSC5502DT

   - подбор ⓘ биполярного транзистора по параметрам

 

KSC5502DT - технические параметры

 ..1. Size:435K  onsemi
ksc5502d ksc5502dt.pdfpdf_icon

KSC5502DT

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.1. Size:436K  onsemi
ksc5502dtm ksc5502dttu.pdfpdf_icon

KSC5502DT

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 6.1. Size:137K  fairchild semi
ksc5502d.pdfpdf_icon

KSC5502DT

KSC5502D/KSC5502DT D-PAK Equivalent Circuit High Voltage Power Switch Switching C Application 1 Wide Safe Operating Area TO-220 Built-in Free-Wheeling Diode B Suitable for Electronic Ballast Application Small Variance in Storage Time Two Package Choices D-PAK or TO-220 E 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absol

 7.1. Size:226K  fairchild semi
ksc5502.pdfpdf_icon

KSC5502DT

April 2008 KSC5502 NPN Planar Silicon Transistor High Voltage Power Switch Mode Application Small Variance in Storage Time Equivalent Circuit Wide Safe Operating Area C Suitable for Electronic Ballast Application B 1 TO-220 E 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings * TC=25 C unless otherwise noted Symbol Parameter Value Units BVCBO Collector-Base Vol

Другие транзисторы... KSC5026M , KSC5305D , KSC5305DF , KSC5338D , KSC5402D , KSC5402DT , KSC5502 , KSC5502D , BC548 , KSC5603D , KSE13003T , KSE44H , KSE45H , MJD41CTF , MJD47TF , MJD50TF , NZT902 .

 

 
Back to Top

 


 
.