KSC5502DT - Аналоги. Основные параметры
Наименование производителя: KSC5502DT
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 50 W
Макcимально допустимое напряжение коллектор-база (Ucb): 1200 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 600 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 12 V
Макcимальный постоянный ток коллектора (Ic): 2 A
Статический коэффициент передачи тока (hfe): 15
Корпус транзистора: TO220
Аналоги (замена) для KSC5502DT
KSC5502DT - технические параметры
ksc5502d ksc5502dt.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
ksc5502dtm ksc5502dttu.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
ksc5502d.pdf
KSC5502D/KSC5502DT D-PAK Equivalent Circuit High Voltage Power Switch Switching C Application 1 Wide Safe Operating Area TO-220 Built-in Free-Wheeling Diode B Suitable for Electronic Ballast Application Small Variance in Storage Time Two Package Choices D-PAK or TO-220 E 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absol
ksc5502.pdf
April 2008 KSC5502 NPN Planar Silicon Transistor High Voltage Power Switch Mode Application Small Variance in Storage Time Equivalent Circuit Wide Safe Operating Area C Suitable for Electronic Ballast Application B 1 TO-220 E 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings * TC=25 C unless otherwise noted Symbol Parameter Value Units BVCBO Collector-Base Vol
Другие транзисторы... KSC5026M , KSC5305D , KSC5305DF , KSC5338D , KSC5402D , KSC5402DT , KSC5502 , KSC5502D , BC548 , KSC5603D , KSE13003T , KSE44H , KSE45H , MJD41CTF , MJD47TF , MJD50TF , NZT902 .
Список транзисторов
Обновления
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
110n8f6 mosfet datasheet | 2sc458 datasheet | irfz48 | bf494 transistor equivalent | 2sc458 pinout | bc183l | tip35 datasheet | tip36c datasheet






