KSC5502DT pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

KSC5502DT Specs and Replacement

Type Designator: KSC5502DT

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 50 W

Maximum Collector-Base Voltage |Vcb|: 1200 V

Maximum Collector-Emitter Voltage |Vce|: 600 V

Maximum Emitter-Base Voltage |Veb|: 12 V

Maximum Collector Current |Ic max|: 2 A

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO220

KSC5502DT Substitution

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KSC5502DT datasheet

..1. Size:435K onsemi

ksc5502d ksc5502dt.pdf pdf_icon

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

0.1. Size:436K onsemi

ksc5502dtm ksc5502dttu.pdf pdf_icon

6.1. Size:137K fairchild semi

ksc5502d.pdf pdf_icon

KSC5502D/KSC5502DT D-PAK Equivalent Circuit High Voltage Power Switch Switching C Application 1 Wide Safe Operating Area TO-220 Built-in Free-Wheeling Diode B Suitable for Electronic Ballast Application Small Variance in Storage Time Two Package Choices D-PAK or TO-220 E 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absol... See More ⇒

7.1. Size:226K fairchild semi

ksc5502.pdf pdf_icon

April 2008 KSC5502 NPN Planar Silicon Transistor High Voltage Power Switch Mode Application Small Variance in Storage Time Equivalent Circuit Wide Safe Operating Area C Suitable for Electronic Ballast Application B 1 TO-220 E 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings * TC=25 C unless otherwise noted Symbol Parameter Value Units BVCBO Collector-Base Vol... See More ⇒