2SC5245A - описание и поиск аналогов

Ordering number ENA1074 2SC5245A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor UHF to S-Band Low-Noise Amplifier 2SC5245A OSC Applications Features Low-noise NF=0.9dB typ (f=1GHz). NF=1.4dB typ (f=1.5GHz). High gain S21e 2=10dB typ (f=1.5GHz). High cut-off frequency fT=8GHz typ. Low-voltage, low-current operation (VCE=1V, IC=1

Ordering number ENA1074A 2SC5245A RF Transistor http //onsemi.com 10V, 30mA, fT=8GHz, NPN Single MCP Features Low-noise NF=0.9dB typ (f=1GHz) NF=1.4dB typ (f=1.5GHz) High gain 2 S21e =10dB typ (f=1.5GHz) High cut-off frequency fT=8GHz typ Low-voltage, low-current operation (VCE=1V, IC=1mA) fT=3.5GHz typ S21e =5.5dB typ (f=1.5GHz)

Ordering number EN5184A NPN Epitaxial Planar Silicon Transistor 2SC5245 UHF to S-Band Low-Noise Amplifier, OSC Applications Features Package Dimensions Low noise NF=0.9dB typ (f=1GHz). unit mm NF=1.4dB typ (f=1.5GHz). 2059B 2 High gain S21e =10dB typ (f=1.5GHz). [2SC5245] High cutoff frequency fT=11GHz typ. 0.3 Low-voltage, low-current operation 0.

2SC5242 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5242 Power Amplifier Applications Unit mm High Collector breakdown voltage V = 230 V (min) CEO Complementary to 2SA1962 Suitable fro use in 80-W high fidelity audio amplifier s output stage Maximum Ratings (Tc = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 230 V Collector

January 2009 2SC5242/FJA4313 NPN Epitaxial Silicon Transistor Applications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features High Current Capability IC = 17A TO-3P 1 High Power Dissipation 130watts 1.Base 2.Collector 3.Emitter High Frequency 30MHz. High Voltage VCEO=250V Wide S.O.A for reliable operation. Excelle

2SA1964 Transistors Transistors 2SC5248 (SPEC-A315) (SPEC-C315) 282

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Power Transistors 2SC5244, 2SC5244A Silicon NPN triple diffusion mesa type For horizontal deflection output Unit mm 3.3 0.2 20.0 0.5 5.0 0.3 3.0 Features High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching 1.5 Wide area of safe operation (ASO) 1.5 2.0 0.3 2.7 0.3 3.0 0.3 Absolute Maximum Ratings (TC=25

2SC5247 Silicon NPN Epitaxial ADE-208-281 1st. Edition Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 13.5 GHz typ High gain, low noise figure PG = 17 dB typ, NF = 1.2 dB typ at f = 900 MHz Outline SMPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC5247 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to bas

2SC5246 Silicon NPN Epitaxial ADE-208-264 1st. Edition Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 12 GHz typ High gain, low noise figure PG = 16.5 dB typ, NF = 1.6 dB typ at f = 900 MHz Outline SMPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC5246 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to bas

2SC5249 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application Switching Regulator and General Purpose External Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) 2SC5249 Symbol 2SC5249 Symbol Conditions Unit Unit 0.2 4.2 0.2 10.1 c0.5 2.8 100max VCBO 600 ICBO VCB=600V A V 100max VC

isc Silicon NPN Power Transistor 2SC5244 DESCRIPTION High breakdown voltage, and high reliability Wide area of safe operation High-speed switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector

isc Silicon NPN Power Transistor 2SC5243 DESCRIPTION Collector Emitter Sustaining Voltage V =1700 V(Min) CEO Low Collector Saturation Voltage V = 3V(Max.)@ I = 2.8A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM

isc Silicon NPN Power Transistor 2SC5249 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 600V(Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-

isc Silicon NPN Power Transistors 2SC5241 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min) CEO(SUS) Fast Switching Speed Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators High frequency inverters General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T =25 )

isc Silicon NPN Power Transistor 2SC5248 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 160V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SA1964 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Driver stage amplifier applications. ABSOLUTE MAXIM

isc Silicon NPN Power Transistor 2SC5242 DESCRIPTION High Collector Breakdown Voltage- V = 230V(Min.) (BR)CEO Good Linearity of h FE Complement to Type 2SA1962 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 80W high fidelity audio frequency amplifier output stage applications