2SC5245A Datasheet, Equivalent, Cross Reference Search

Ordering number : ENA1074 2SC5245ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorUHF to S-Band Low-Noise Amplifier2SC5245AOSC ApplicationsFeatures Low-noise : NF=0.9dB typ (f=1GHz).: NF=1.4dB typ (f=1.5GHz). High gain : S21e2=10dB typ (f=1.5GHz). High cut-off frequency : fT=8GHz typ. Low-voltage, low-current operation (VCE=1V, IC=1

Ordering number : ENA1074A2SC5245ARF Transistorhttp://onsemi.com10V, 30mA, fT=8GHz, NPN Single MCPFeatures Low-noise : NF=0.9dB typ (f=1GHz) : NF=1.4dB typ (f=1.5GHz) High gain 2 : S21e =10dB typ (f=1.5GHz) High cut-off frequency : fT=8GHz typ Low-voltage, low-current operation (VCE=1V, IC=1mA) : fT=3.5GHz typ : S21e =5.5dB typ (f=1.5GHz)

Ordering number:EN5184ANPN Epitaxial Planar Silicon Transistor2SC5245UHF to S-Band Low-Noise Amplifier,OSC ApplicationsFeatures Package Dimensions Low noise : NF=0.9dB typ (f=1GHz).unit:mm: NF=1.4dB typ (f=1.5GHz).2059B2 High gain : S21e =10dB typ (f=1.5GHz).[2SC5245] High cutoff frequency : fT=11GHz typ.0.3 Low-voltage, low-current operation0.

2SC5242 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5242 Power Amplifier Applications Unit: mm High Collector breakdown voltage: V = 230 V (min) CEO Complementary to 2SA1962 Suitable fro use in 80-W high fidelity audio amplifiers output stage Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 230 VCollector

January 20092SC5242/FJA4313NPN Epitaxial Silicon TransistorApplications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features High Current Capability: IC = 17ATO-3P1 High Power Dissipation : 130watts1.Base 2.Collector 3.Emitter High Frequency : 30MHz. High Voltage : VCEO=250V Wide S.O.A for reliable operation. Excelle

2SA1964TransistorsTransistors2SC5248(SPEC-A315)(SPEC-C315)282

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Power Transistors2SC5244, 2SC5244ASilicon NPN triple diffusion mesa typeFor horizontal deflection outputUnit: mm 3.3 0.220.0 0.5 5.0 0.33.0FeaturesHigh breakdown voltage, and high reliability through the use of aglass passivation layerHigh-speed switching 1.5Wide area of safe operation (ASO)1.52.0 0.32.7 0.33.0 0.3Absolute Maximum Ratings (TC=25

Power Transistors2SC5243Silicon NPN triple diffusion mesa typeFor horizontal deflection outputUnit: mm 3.3 0.220.0 0.5 5.0 0.33.0FeaturesHigh breakdown voltage, and high reliability through the use of aglass passivation layerHigh-speed switching 1.5Wide area of safe operation (ASO)1.52.0 0.32.7 0.33.0 0.3Absolute Maximum Ratings (TC=25C)1.0

2SC5247Silicon NPN EpitaxialADE-208-2811st. EditionApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 13.5 GHz typ High gain, low noise figurePG = 17 dB typ, NF = 1.2 dB typ at f = 900 MHzOutlineSMPAK3121. Emitter2. Base3. Collector2SC5247Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to bas

2SC5246Silicon NPN EpitaxialADE-208-2641st. EditionApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 12 GHz typ High gain, low noise figurePG = 16.5 dB typ, NF = 1.6 dB typ at f = 900 MHzOutlineSMPAK3121. Emitter2. Base3. Collector2SC5246Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to bas

2SC5249Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)Application : Switching Regulator and General PurposeExternal Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)2SC5249Symbol 2SC5249 Symbol Conditions UnitUnit0.24.20.210.1c0.52.8100maxVCBO 600 ICBO VCB=600V AV100maxVC

isc Silicon NPN Power Transistor 2SC5244DESCRIPTIONHigh breakdown voltage, and high reliabilityWide area of safe operationHigh-speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector

isc Silicon NPN Power Transistor 2SC5243DESCRIPTIONCollectorEmitter Sustaining VoltageV =1700 V(Min)CEOLow Collector Saturation Voltage: V = 3V(Max.)@ I = 2.8ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYM

isc Silicon NPN Power Transistor 2SC5249DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 600V(Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-

isc Silicon NPN Power Transistors 2SC5241DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)Fast Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25)

isc Silicon NPN Power Transistor 2SC5248DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 160V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SA1964Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Driver stage amplifier applications.ABSOLUTE MAXIM

isc Silicon NPN Power Transistor 2SC5242DESCRIPTIONHigh Collector Breakdown Voltage-: V = 230V(Min.)(BR)CEOGood Linearity of hFEComplement to Type 2SA1962Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 80W high fidelity audio frequencyamplifier output stage applications