Биполярный транзистор BCW65AL - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BCW65AL
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.225 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 32 V
Макcимальный постоянный ток коллектора (Ic): 0.8 A
Граничная частота коэффициента передачи тока (ft): 100 MHz
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора: SOT23
BCW65AL Datasheet (PDF)
bcw65alt.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BCW65ALT1/DGeneral Purpose TransistorBCW65ALT1NPN SiliconCOLLECTOR313BASE122EMITTERMAXIMUM RATINGSCASE 31808, STYLE 6Rating Symbol Value Unit SOT23 (TO236AB)CollectorEmitter Voltage VCEO 32 VdcCollectorBase Voltage VCBO 60 VdcEmitterBase Voltage VEBO 5.0 VdcCollector Current
bcw65alt1-clt1.pdf
BCW65ALT1G,BCW65CLT1GGeneral Purpose TransistorNPN Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTOR3Compliant1BASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERCollector - Emitter Voltage VCEO 32 VdcCollector - Base Voltage VCBO 60 Vdc3Emitter - Base Voltage VEBO 5.0 Vdc1Collector Current - Cont
bcw65alt1g.pdf
BCW65ALT1G,BCW65CLT1GGeneral Purpose TransistorNPN Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTOR3Compliant1BASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERCollector - Emitter Voltage VCEO 32 VdcCollector - Base Voltage VCBO 60 Vdc3Emitter - Base Voltage VEBO 5.0 Vdc1Collector Current - Cont
bcw65alt1g bcw65clt1g.pdf
BCW65ALT1G,BCW65CLT1GGeneral Purpose TransistorNPN Siliconwww.onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTOR3Compliant1BASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERCollector - Emitter Voltage VCEO 32 VdcCollector - Base Voltage VCBO 60 Vdc 3Emitter - Base Voltage VEBO 5.0 Vdc1Collector Current - Continuo
bcw65alt1.pdf
FM120-M WILLASBC LT1THRUGeneral Purpose TransistorsFM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProducPackage outlineFeaturesNPN Silicons design, excellent power dissipation offers Batch proces betFeatruester reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in ord
lbcw65alt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconLBCW65ALT1GFeatruesS-LBCW65ALT1GWe declare that the material of product compliance with RoHS requirements.S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.3MAXIMUM RATINGS1Rating Symbol Value Unit2CollectorEmit
Другие транзисторы... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050