BCW65AL Datasheet, Equivalent, Cross Reference Search
Type Designator: BCW65AL
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Emitter Voltage |Vce|: 32 V
Maximum Collector Current |Ic max|: 0.8 A
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT23
BCW65AL Transistor Equivalent Substitute - Cross-Reference Search
BCW65AL Datasheet (PDF)
bcw65alt.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BCW65ALT1/DGeneral Purpose TransistorBCW65ALT1NPN SiliconCOLLECTOR313BASE122EMITTERMAXIMUM RATINGSCASE 31808, STYLE 6Rating Symbol Value Unit SOT23 (TO236AB)CollectorEmitter Voltage VCEO 32 VdcCollectorBase Voltage VCBO 60 VdcEmitterBase Voltage VEBO 5.0 VdcCollector Current
bcw65alt1-clt1.pdf
BCW65ALT1G,BCW65CLT1GGeneral Purpose TransistorNPN Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTOR3Compliant1BASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERCollector - Emitter Voltage VCEO 32 VdcCollector - Base Voltage VCBO 60 Vdc3Emitter - Base Voltage VEBO 5.0 Vdc1Collector Current - Cont
bcw65alt1g.pdf
BCW65ALT1G,BCW65CLT1GGeneral Purpose TransistorNPN Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTOR3Compliant1BASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERCollector - Emitter Voltage VCEO 32 VdcCollector - Base Voltage VCBO 60 Vdc3Emitter - Base Voltage VEBO 5.0 Vdc1Collector Current - Cont
bcw65alt1g bcw65clt1g.pdf
BCW65ALT1G,BCW65CLT1GGeneral Purpose TransistorNPN Siliconwww.onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTOR3Compliant1BASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERCollector - Emitter Voltage VCEO 32 VdcCollector - Base Voltage VCBO 60 Vdc 3Emitter - Base Voltage VEBO 5.0 Vdc1Collector Current - Continuo
bcw65alt1.pdf
FM120-M WILLASBC LT1THRUGeneral Purpose TransistorsFM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProducPackage outlineFeaturesNPN Silicons design, excellent power dissipation offers Batch proces betFeatruester reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in ord
lbcw65alt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconLBCW65ALT1GFeatruesS-LBCW65ALT1GWe declare that the material of product compliance with RoHS requirements.S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.3MAXIMUM RATINGS1Rating Symbol Value Unit2CollectorEmit
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