EC3H02BA - описание и поиск аналогов

Ordering number ENA1064B EC3H02BA SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise EC3H02BA Amplifier Applications Features Low noise NF=1.0dB typ (f=1GHz). High gain S21e 2=12dB typ (f=1GHz). High cutoff frequency fT=7GHz typ. Ultrasmall (1006size), slim (0.5mm) leadless package. Halogen free com

Ordering number ENN6523 NPN Epitaxial Planar Silicon Transistor EC3H02B VHF to UHF Low-Noise Wide-Band Amplifier Applications Features Package Dimensions Low noise NF=1.0dB typ (f=1GHz). unit mm 2 High gain S21e =12dB typ (f=1GHz). 2183 High cutoff frequency fT=7GHz typ. [EC3H02B] Ultrasmall (1006size), slim (0.5mm) leadless pack- 0.35 age. 0.2 0.15

Ordering number ENN6579 EC3H02C NPN Epitaxial Planar Silicon Transistor EC3H02C VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions Low noise NF=1.0dB typ (f=1GHz). unit mm High gain S21e 2=12dB typ (f=1GHz). 2184 High cutoff frequency fT=7GHz typ. [EC3H02C] Ultraminiature (1008 size) and thin (0.6mm) 0.5 leadless package

Ordering number ENN6577 EC3H04B NPN Epitaxial Planar Type Silicon Transistor EC3H04B High-Frequency Low-Noise Amplifier and OSC Applications Features Package Dimensions Low noise NF=1.7dB typ (f=2GHz). unit mm High cut-off frequency fT=8GHz typ (VCE=1V). 2183 Low operating voltage. 0.35 [EC3H04B] Ultraminiature (1006 size) and thin (0.5mm) 0.2 0.15 0.15

Ordering number ENN7269 EC3H09B NPN Epitaxial Planar Silicon Transistor EC3H09B High-Frequency Low-Noise Amplifier and OSC Applications Features Package Dimensions Low noise NF=1.5dB typ (f=2GHz). unit mm High cut-off frequency fT=6.5GHz typ (VCE=1V). 2183 fT=11.2GHz typ (VCE=3V). [EC3H09B] Low operating voltage. 0.35 Ultraminiature (1006 size) and thin (0

Ordering number ENN6574 EC3H05B NPN Epitaxial Planar Type Silicon Transistor EC3H05B VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions Low noise NF=1.2dB typ (f=1GHz). unit mm High gain S21e 2=13dB typ (f=1GHz). 2183 Hige cutoff frequency fT=9.0GHz typ. 0.35 [EC3H05B] Ultraminiature (1006 size) and thin (0.5mm) 0.2 0

Ordering number ENN6580 EC3H04C NPN Epitaxial Planar Silicon Transistor EC3H04C High-Frequency Low-Noise Amplifier and OSC Applications Features Package Dimensions Low noise NF=1.7dB typ (f=2GHz). unit mm Hige cut-off frequency fT=8GHz typ (VCE=1V). 2184 Low operating voltage. [EC3H04C] Ultraminiature (1008 size) and thin (0.6mm) leadless package. 0.5 0.2 0.

Ordering number ENN6576 EC3H03B NPN Epitaxial Planar Type Silicon Transistor EC3H03B VHF to UHF Wide-Band Low-Noise Amplifier and OSC Applications Features Package Dimensions Low noise NF=1.1dB typ (f=1GHz). unit mm High gain S21e 2=12dB typ (f=1GHz). 2183 High cut-off frequency fT=7.5GHz typ. 0.35 [EC3H03B] Ultraminiature (1006 size) and thin (0.5m

Ordering number ENN6524 NPN Epitaxial Planar Silicon Transistor EC3H06B UHF to S Band Low-Noise Amplifier and OSC Applications Features Package Dimensions Low noise NF=0.9dB typ (f=1GHz). unit mm NF=1.4dB typ (f=1.5GHz). 2183 2 High gain S21e =10dB typ (f=1.5GHz). [EC3H06B] High cutoff frequency fT=11GHz typ. 0.35 Low voltage, low current operation.

Ordering number ENN6578 EC3H07B NPN Epitaxial Planar Silicon Transistor EC3H07B UHF to S Band Low-Noise Amplifier and OSC Applications Features Package Dimensions Low noise NF=1.5dB typ (f=2GHz). unit mm High cut-off frequency fT=10GHz typ (VCE=1V). 2183 fT=12.5GHz typ (VCE=3V). 0.35 [EC3H07B] Low operating voltage. 0.2 0.15 0.15 High gain S21e 2=

Ordering number ENN6573 EC3H01B NPN Epitaxial Planar Silicon Transistor EC3H01B VHF Band Low-Noise Amplifer and OSC Applications Features Package Dimensions Low noise NF=1.8dB typ (f=150MHz). unit mm High gain S21e 2=16dB typ (f=150MHz). 2183 Ultraminiature (1006 size) and thin (0.5mm) leadless 0.35 [EC3H01B] 0.2 package. 0.15 0.15 0.05 2 1 3 0.05 0.

Ordering number ENA1069 EC3H07BA SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor UHF to S Band Low-Noise Amplifier EC3H07BA and OSC Applications Features Low noise NF=1.5dB typ (f=2GHz). High cutoff frequency fT=10GHz typ (VCE=1V). fT=12.5GHz typ (VCE=3V). Low operating voltage. High gain S21e 2=9.5dB typ (f=2GHz). Ultraminiat