EC3H02BA Specs and Replacement
Type Designator: EC3H02BA
SMD Transistor Code: B
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.07 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 5000 MHz
Collector Capacitance (Cc): 0.7 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: ECSP1006-3
- BJT ⓘ Cross-Reference Search
EC3H02BA datasheet
..1. Size:283K sanyo
ec3h02ba.pdf 
Ordering number ENA1064B EC3H02BA SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise EC3H02BA Amplifier Applications Features Low noise NF=1.0dB typ (f=1GHz). High gain S21e 2=12dB typ (f=1GHz). High cutoff frequency fT=7GHz typ. Ultrasmall (1006size), slim (0.5mm) leadless package. Halogen free com... See More ⇒
7.1. Size:41K sanyo
ec3h02b.pdf
Ordering number ENN6523 NPN Epitaxial Planar Silicon Transistor EC3H02B VHF to UHF Low-Noise Wide-Band Amplifier Applications Features Package Dimensions Low noise NF=1.0dB typ (f=1GHz). unit mm 2 High gain S21e =12dB typ (f=1GHz). 2183 High cutoff frequency fT=7GHz typ. [EC3H02B] Ultrasmall (1006size), slim (0.5mm) leadless pack- 0.35 age. 0.2 0.15... See More ⇒
8.1. Size:26K sanyo
ec3h02c.pdf
Ordering number ENN6579 EC3H02C NPN Epitaxial Planar Silicon Transistor EC3H02C VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions Low noise NF=1.0dB typ (f=1GHz). unit mm High gain S21e 2=12dB typ (f=1GHz). 2184 High cutoff frequency fT=7GHz typ. [EC3H02C] Ultraminiature (1008 size) and thin (0.6mm) 0.5 leadless package ... See More ⇒
9.1. Size:34K sanyo
ec3h04b.pdf
Ordering number ENN6577 EC3H04B NPN Epitaxial Planar Type Silicon Transistor EC3H04B High-Frequency Low-Noise Amplifier and OSC Applications Features Package Dimensions Low noise NF=1.7dB typ (f=2GHz). unit mm High cut-off frequency fT=8GHz typ (VCE=1V). 2183 Low operating voltage. 0.35 [EC3H04B] Ultraminiature (1006 size) and thin (0.5mm) 0.2 0.15 0.15 ... See More ⇒
9.2. Size:37K sanyo
ec3h09b.pdf
Ordering number ENN7269 EC3H09B NPN Epitaxial Planar Silicon Transistor EC3H09B High-Frequency Low-Noise Amplifier and OSC Applications Features Package Dimensions Low noise NF=1.5dB typ (f=2GHz). unit mm High cut-off frequency fT=6.5GHz typ (VCE=1V). 2183 fT=11.2GHz typ (VCE=3V). [EC3H09B] Low operating voltage. 0.35 Ultraminiature (1006 size) and thin (0... See More ⇒
9.3. Size:25K sanyo
ec3h05b.pdf
Ordering number ENN6574 EC3H05B NPN Epitaxial Planar Type Silicon Transistor EC3H05B VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions Low noise NF=1.2dB typ (f=1GHz). unit mm High gain S21e 2=13dB typ (f=1GHz). 2183 Hige cutoff frequency fT=9.0GHz typ. 0.35 [EC3H05B] Ultraminiature (1006 size) and thin (0.5mm) 0.2 0... See More ⇒
9.4. Size:33K sanyo
ec3h04c.pdf
Ordering number ENN6580 EC3H04C NPN Epitaxial Planar Silicon Transistor EC3H04C High-Frequency Low-Noise Amplifier and OSC Applications Features Package Dimensions Low noise NF=1.7dB typ (f=2GHz). unit mm Hige cut-off frequency fT=8GHz typ (VCE=1V). 2184 Low operating voltage. [EC3H04C] Ultraminiature (1008 size) and thin (0.6mm) leadless package. 0.5 0.2 0.... See More ⇒
9.5. Size:27K sanyo
ec3h03b.pdf
Ordering number ENN6576 EC3H03B NPN Epitaxial Planar Type Silicon Transistor EC3H03B VHF to UHF Wide-Band Low-Noise Amplifier and OSC Applications Features Package Dimensions Low noise NF=1.1dB typ (f=1GHz). unit mm High gain S21e 2=12dB typ (f=1GHz). 2183 High cut-off frequency fT=7.5GHz typ. 0.35 [EC3H03B] Ultraminiature (1006 size) and thin (0.5m... See More ⇒
9.6. Size:44K sanyo
ec3h06b.pdf
Ordering number ENN6524 NPN Epitaxial Planar Silicon Transistor EC3H06B UHF to S Band Low-Noise Amplifier and OSC Applications Features Package Dimensions Low noise NF=0.9dB typ (f=1GHz). unit mm NF=1.4dB typ (f=1.5GHz). 2183 2 High gain S21e =10dB typ (f=1.5GHz). [EC3H06B] High cutoff frequency fT=11GHz typ. 0.35 Low voltage, low current operation.... See More ⇒
9.7. Size:33K sanyo
ec3h07b.pdf
Ordering number ENN6578 EC3H07B NPN Epitaxial Planar Silicon Transistor EC3H07B UHF to S Band Low-Noise Amplifier and OSC Applications Features Package Dimensions Low noise NF=1.5dB typ (f=2GHz). unit mm High cut-off frequency fT=10GHz typ (VCE=1V). 2183 fT=12.5GHz typ (VCE=3V). 0.35 [EC3H07B] Low operating voltage. 0.2 0.15 0.15 High gain S21e 2=... See More ⇒
9.8. Size:26K sanyo
ec3h01b.pdf
Ordering number ENN6573 EC3H01B NPN Epitaxial Planar Silicon Transistor EC3H01B VHF Band Low-Noise Amplifer and OSC Applications Features Package Dimensions Low noise NF=1.8dB typ (f=150MHz). unit mm High gain S21e 2=16dB typ (f=150MHz). 2183 Ultraminiature (1006 size) and thin (0.5mm) leadless 0.35 [EC3H01B] 0.2 package. 0.15 0.15 0.05 2 1 3 0.05 0.... See More ⇒
9.9. Size:93K sanyo
ec3h07ba.pdf
Ordering number ENA1069 EC3H07BA SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor UHF to S Band Low-Noise Amplifier EC3H07BA and OSC Applications Features Low noise NF=1.5dB typ (f=2GHz). High cutoff frequency fT=10GHz typ (VCE=1V). fT=12.5GHz typ (VCE=3V). Low operating voltage. High gain S21e 2=9.5dB typ (f=2GHz). Ultraminiat... See More ⇒
Detailed specifications: DTC114YE, DTC115EE, DTC123JE, DTC124EE, DTC124XE, DTC143EE, DTC143ZE, DTC144EE, TIP42C, EC4H09C, ECH8501, EMD4DXV6, EMF18, EMF5XV6T5, EMG2DXV5, EMG5DXV5, EMX1
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