Справочник транзисторов. MMBT5401L

 

Биполярный транзистор MMBT5401L - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: MMBT5401L
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.225 W
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 150 V
   Макcимальный постоянный ток коллектора (Ic): 0.5 A
   Граничная частота коэффициента передачи тока (ft): 100 MHz
   Статический коэффициент передачи тока (hfe): 60
   Корпус транзистора: SOT23

 Аналоги (замена) для MMBT5401L

 

 

MMBT5401L Datasheet (PDF)

 ..1. Size:81K  onsemi
mmbt5401l smmbt5401l nsvmmbt5401l.pdf

MMBT5401L
MMBT5401L

MMBT5401L, SMMBT5401L,NSVMMBT5401LHigh Voltage TransistorPNP Siliconwww.onsemi.comFeatures S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSSOT-23 (TO-236)CompliantCASE 318STYLE 6MAXIMUM RATINGSCOLLECTOR

 ..2. Size:596K  umw-ic
mmbt5401l mmbt5401h.pdf

MMBT5401L
MMBT5401L

RUMW UMW MMBT5401SOT-23 Plastic-Encapsulate TransistorsMMBT5401 TRANSISTOR (PNP) SOT23 FEATURES Complementary to MMBT5551 Ideal for Medium Power Amplification and Switching 1. BASE MARKING: 2L 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value UnitVCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Vo

 ..3. Size:959K  cn zre
mmbt5401l mmbt5401h.pdf

MMBT5401L
MMBT5401L

MMBT5401 TRANSISTOR(NPN) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features MMBT5551 ; Complementary to MMBT5551 300mW; Power Dissipation of 300mW High Stability and High Reliability Mechanical Data : SOT-23 SOT-23 Small Outline Plastic Pack

 0.1. Size:125K  onsemi
nsvmmbt5401lt3g.pdf

MMBT5401L
MMBT5401L

MMBT5401L, SMMBT5401L,NSVMMBT5401LHigh Voltage TransistorPNP Siliconhttp://onsemi.comFeatures S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSSOT-23 (TO-236)CompliantCASE 318STYLE 6MAXIMUM RATINGSCOLLECTO

 0.2. Size:125K  onsemi
mmbt5401lt1g.pdf

MMBT5401L
MMBT5401L

MMBT5401LT1G,SMMBT5401LT1G,MMBT5401LT3GHigh Voltage TransistorPNP Siliconhttp://onsemi.comFeatures AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change RequirementsSOT-23 (TO-236)CASE 318 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSSTYLE 6Compliant*COLLECTORMAXIMUM RAT

 0.3. Size:112K  onsemi
mmbt5401lt1g smmbt5401lt1g mmbt5401lt3g.pdf

MMBT5401L
MMBT5401L

MMBT5401LT1G,SMMBT5401LT1G,MMBT5401LT3GHigh Voltage TransistorPNP Siliconhttp://onsemi.comFeatures AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change RequirementsSOT-23 (TO-236)CASE 318 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSSTYLE 6CompliantCOLLECTORMAXIMUM RATI

 0.4. Size:115K  onsemi
mmbt5401lt1-d.pdf

MMBT5401L
MMBT5401L

MMBT5401LT1GHigh Voltage TransistorPNP SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.comCompliantCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit1Collector-Emitter Voltage VCEO -150 VdcBASECollector-Base Voltage VCBO -160 Vdc2Emitter-Base Voltage VEBO -5.0 VdcEMITTERCollector Current - Continuous IC -500 mAdcS

 0.5. Size:325K  willas
mmbt5401lt1.pdf

MMBT5401L
MMBT5401L

FM120-M WILLASMMBT5401LT1THRUHigh Voltage TransistorFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123HFEATURE Low profile surface mounted application in order to o

 0.6. Size:910K  shenzhen
mmbt5401lt1.pdf

MMBT5401L
MMBT5401L

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT5401LT1 TRANSISTOR (PNP) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR - Power dissipation 2. 4 PCM: 0.3 W (Tamb=25) 1. 3 Collector current ICM: -0.6 A Collector-base voltage V(BR)CBO: -160 V Operating and storage junction temperature range Unit: mm

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