MMBTA13L, SMMBTA13L,MMBTA14L, SMMBTA14LDarlington AmplifierTransistorsNPN Siliconhttp://onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualified andPPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSSOT-23 (TO-236)Compliant* CASE 318STYLE 6COLLECTOR 3MAXIM

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBTA13LT1/DMMBTA13LT1Darlington Amplifier TransistorsMMBTA14LT1*NPN SiliconCOLLECTOR 3*Motorola Preferred DeviceBASE13EMITTER 21MAXIMUM RATINGS2Rating Symbol Value UnitCollectorEmitter Voltage VCES 30 VdcCASE 31808, STYLE 6SOT23 (TO236AB)CollectorBase Voltage VCBO 30 VdcEmitte

MPSA14 MMBTA14 PZTA14CCEECBC TO-92BSOT-23BSOT-223EMark: 1NNPN Darlington TransistorThis device is designed for applications requiring extremelyhigh current gain at collector currents to 1.0 A. Sourcedfrom Process 05.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCES Collector-Emitter Voltage 30 VVCBO Collector-Ba

SMBTA14/MMBTA14NPN Silicon Darlington Transistor High collector current23 Low collector-emitter saturation voltage1 Pb-free (RoHS compliant) package Qualified according AEC Q101Type Marking Pin Configuration PackageSMBTA14/MMBTA14 s1N SOT231=B 2=E 3=CMaximum RatingsParameter Symbol Value Unit30 VCollector-emitter voltage VCES30Collector-base voltage

MMBTA13 MMBTA14Elektronische Bauelemente Darlington Amplifier Transistor NPN SiliconRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeSOT-23Dim Min MaxAL A 2.800 3.040COLLECTOR 3B 1.200 1.4003 3C 0.890 1.110SBASE 1 B1 21 D 0.370 0.5002G 1.780 2.040V GEMITTER 2H 0.013 0.100J 0.085 0.177CFEATURES K 0.450 0.600HJL 0.890 1.0

SEMICONDUCTOR MMBTA13/14TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION. DARLINGTON TRANSISTOR.EL B LDIM MILLIMETERS_+2.93 0.20AB 1.30+0.20/-0.15C 1.30 MAX23 D 0.45+0.15/-0.05MAXIMUM RATING (Ta=25 )E 2.40+0.30/-0.201G 1.90CHARACTERISTIC SYMBOL RATING UNITH 0.95J 0.13+0.10/-0.05VCBOCollector-Base Voltage 30 VK 0.00 ~ 0.10

MMBTA13,14 TRANSISTOR (NPN) SOT-23 FEATURES Darlington Amplifier Unit : mm 1. BASE Marking : MMBTA13:K2D; MMBTA14:K3D 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 30 VVCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 10 V IC Collector Current -Continuous 0.3 A PC C

MMBTA13,14 SOT-23 Transistor(NPN)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features Darlington Amplifier Marking : MMBTA13:K2D; MMBTA14:K3D MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO Collector-Base Voltage 30 VVCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 10 V IC Collector

SEMICONDUCTORMMBTA14TECHNICAL DATADarlington Amplifier TransistorsWe declare that the material of productcompliance with RoHS requirements.3ORDERING INFORMATION2Device Marking Shipping1MMBTA13 1M 3000/Tape & ReelMMBTA14 1N 3000/Tape & ReelSOT23MAXIMUM RATINGSCOLLECTORRating Symbol Value Unit 3CollectorEmitter Voltage V 30 VdcCES1CollectorBase Vol

SMD Type DiodesDarlington TransistorsMMBTA14 (KMBTA14)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=0.3A Collector Emitter Voltage VCEO=30V1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO