Биполярный транзистор MUN5216DW1 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: MUN5216DW1
Маркировка: 7F
Тип материала: Si
Полярность: Pre-Biased-NPN
Встроенный резистор цепи смещения R1 = 4.7 kOhm
Максимальная рассеиваемая мощность (Pc): 0.15 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 160
Корпус транзистора: SC88 SC70 SOT363
Аналоги (замена) для MUN5216DW1
MUN5216DW1 Datasheet (PDF)
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MUN5211DW1T1G,SMUN5211DW1T1G,NSVMUN5211DW1T1G SeriesDual Bias ResistorTransistorshttp://onsemi.comNPN Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThe Bias Resistor Transistor (BRT) contains a single transistor withSOT-363a monolithic bias network consisting of two resistors; a series base CASE 419BSTYLE 1resistor and a base-emitter resistor. The
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LESHAN RADIO COMPANY, LTD.Dual Bias ResistorTransistorsLMUN5211DW1T1GNPN Silicon Surface Mount TransistorsSerieswith Monolithic Bias Resistor NetworkS-LMUN5211DW1T1GSeriesThe BRT (Bias Resistor Transistor) contains a single transistor with a monolithic biasnetwork consisting of two resistors; a series base resistor and a baseemitter resistor. These65digital transistor
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MUN5211T1G Series,SMUN5211T1G SeriesBias Resistor TransistorNPN Silicon Surface Mount Transistorwith Monolithic Bias Resistor Networkhttp://onsemi.comThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorNPN SILICONTransistor) contains a single transistor with a monolithic bias networkconsis
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LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorLMUN5211T1GNPN Silicon Surface Mount TransistorSerieswith Monolithic Bias Resistor Network3This new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias Resistor1Transistor) contains a single transistor with a monolithic bias network con- 2sisting of two r
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