NSS12100UW datasheet, аналоги, основные параметры
Наименование производителя: NSS12100UW 📄📄
Тип материала: Si
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 1.1 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 12 V
Макcимальный постоянный ток коллектора (Ic): 1 A
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 200 MHz
Статический коэффициент передачи тока (hFE): 200
Корпус транзистора: WDFN
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Аналоги (замена) для NSS12100UW
- подборⓘ биполярного транзистора по параметрам
NSS12100UW даташит
nss12100uw3tcg.pdf
NSS12100UW3TCG 12 V, 1 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is importa
nss12100m3t5g.pdf
NSS12100M3T5G 12 V, 1 A, Low VCE(sat) PNP Transistor ON Semiconductor's e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.
nss12100m3.pdf
NSS12100M3T5G 12 V, 1 A, Low VCE(sat) PNP Transistor ON Semiconductor's e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.
nss12100xv6.pdf
NSS12100XV6T1G 12 V, 1 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is importa
Другие транзисторы: NSB1706DMW5, NSB4904DW1, NSB9435, NSL12AW, NSM6056MT1G, NSM80100M, NSM80101M, NSS12100M3T5G, 2222A, NSS12100XV6T1G, NSS12200L, NSS12200WT1G, NSS12201L, NSS12500UW3, NSS12501UW3, NSS12601CF8, NSS1C200
Параметры биполярного транзистора и их взаимосвязь
History: RN1962 | AUY22 | 2SC477 | 2N3804 | MUN5315DW1T1G | MJ13333 | GD241
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