Справочник транзисторов. NSS12100UW

 

Биполярный транзистор NSS12100UW Даташит. Аналоги


   Наименование производителя: NSS12100UW
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 1.1 W
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 12 V
   Макcимальный постоянный ток коллектора (Ic): 1 A
   Граничная частота коэффициента передачи тока (ft): 200 MHz
   Статический коэффициент передачи тока (hfe): 200
   Корпус транзистора: WDFN
 

 Аналог (замена) для NSS12100UW

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NSS12100UW Datasheet (PDF)

 0.1. Size:63K  onsemi
 nss12100uw3tcg.pdf pdf_icon

NSS12100UW

NSS12100UW3TCG12 V, 1 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is importa

 6.1. Size:82K  onsemi
 nss12100m3t5g.pdf pdf_icon

NSS12100UW

NSS12100M3T5G12 V, 1 A, Low VCE(sat)PNP TransistorON Semiconductor's e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is important.

 6.2. Size:82K  onsemi
 nss12100m3.pdf pdf_icon

NSS12100UW

NSS12100M3T5G12 V, 1 A, Low VCE(sat)PNP TransistorON Semiconductor's e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is important.

 6.3. Size:100K  onsemi
 nss12100xv6.pdf pdf_icon

NSS12100UW

NSS12100XV6T1G12 V, 1 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is importa

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы... NSB1706DMW5 , NSB4904DW1 , NSB9435 , NSL12AW , NSM6056MT1G , NSM80100M , NSM80101M , NSS12100M3T5G , SS8050 , NSS12100XV6T1G , NSS12200L , NSS12200WT1G , NSS12201L , NSS12500UW3 , NSS12501UW3 , NSS12601CF8 , NSS1C200 .

History: HS5306 | HS5813 | MMBTSC3356R | KTX112T

 

 
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