NSS12201L datasheet, аналоги, основные параметры
Наименование производителя: NSS12201L 📄📄
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.54 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 12 V
Макcимальный постоянный ток коллектора (Ic): 4 A
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 150 MHz
Статический коэффициент передачи тока (hFE): 200
Корпус транзистора: SOT23
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Аналоги (замена) для NSS12201L
- подборⓘ биполярного транзистора по параметрам
NSS12201L даташит
nss12201l.pdf
NSS12201LT1G 12 V, 4.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications http //onsemi.com where affordable efficient energy control is importa
nss12201lt1g.pdf
NSS12201LT1G 12 V, 4.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications http //onsemi.com where affordable efficient energy control is importa
nss12200lt1g.pdf
NSS12200LT1G 12 V, 4.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications http //onsemi.com where affordable efficient energy control is importa
nss12200l.pdf
NSS12200L 12 V, 4.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. www.onsemi.com T
Другие транзисторы: NSM6056MT1G, NSM80100M, NSM80101M, NSS12100M3T5G, NSS12100UW, NSS12100XV6T1G, NSS12200L, NSS12200WT1G, 2SD669A, NSS12500UW3, NSS12501UW3, NSS12601CF8, NSS1C200, NSS1C200L, NSS1C201LT1G, NSS1C201MZ4T1G, NSS20101JT1G
Параметры биполярного транзистора и их взаимосвязь
History: MUN2212T1G | BFW23 | BF757BA | 2SA509G | RN4904FE | RN4906 | BFW52
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