Справочник транзисторов. NSS1C201LT1G

 

Биполярный транзистор NSS1C201LT1G Даташит. Аналоги


   Наименование производителя: NSS1C201LT1G
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.71 W
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V
   Макcимальный постоянный ток коллектора (Ic): 2 A
   Граничная частота коэффициента передачи тока (ft): 100 MHz
   Статический коэффициент передачи тока (hfe): 120
   Корпус транзистора: SOT23
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NSS1C201LT1G Datasheet (PDF)

 5.1. Size:76K  onsemi
 nss1c201l.pdf pdf_icon

NSS1C201LT1G

NSS1C201L, NSV1C201L100 V, 3.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationswww.onsemi.comwhere affordable efficient energy control is i

 5.2. Size:137K  onsemi
 nss1c201l nsv1c201l.pdf pdf_icon

NSS1C201LT1G

NSS1C201L, NSV1C201L100 V, 3.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesewww.onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is i

 6.1. Size:109K  onsemi
 nss1c201mz4.pdf pdf_icon

NSS1C201LT1G

NSS1C201MZ4,NSV1C201MZ4100 V, 2.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy cont

 6.2. Size:104K  onsemi
 nss1c201mz4 nsv1c201mz4.pdf pdf_icon

NSS1C201LT1G

NSS1C201MZ4,NSV1C201MZ4100 V, 2.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy cont

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History: BFS91A | KSC5039 | D66EW3 | TN5447 | KT988B | ZTX3707K

 

 
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