Справочник транзисторов. NSS30201MR6T1G

 

Биполярный транзистор NSS30201MR6T1G Даташит. Аналоги


   Наименование производителя: NSS30201MR6T1G
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 1.75 W
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V
   Макcимальный постоянный ток коллектора (Ic): 3 A
   Граничная частота коэффициента передачи тока (ft): 200 MHz
   Статический коэффициент передачи тока (hfe): 300
   Корпус транзистора: TSOP-6
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NSS30201MR6T1G Datasheet (PDF)

 ..1. Size:65K  onsemi
nss30201mr6t1g.pdfpdf_icon

NSS30201MR6T1G

NSS30201MR6T1G30 V, 3 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationshttp://onsemi.comwhere affordable efficient energy control is importa

 ..2. Size:204K  onsemi
nss30201mr6t1g snss30201mr6t1g.pdfpdf_icon

NSS30201MR6T1G

NSS30201MR6T1G,SNSS30201MR6T1G30 V, 3 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)http://onsemi.comtransistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applications 30 VOLTSwhere affordable efficien

 9.1. Size:150K  onsemi
nss30071mr6t1g.pdfpdf_icon

NSS30201MR6T1G

NSS30071MR6T1G30 V, 0.7 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is impor

 9.2. Size:107K  onsemi
nss30100lt1g.pdfpdf_icon

NSS30201MR6T1G

NSS30100LT1G30 V, 2 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationswww.onsemi.comwhere affordable efficient energy control is important.

Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2SC2257A | BC337A-16 | TV37

 

 
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