Справочник транзисторов. NSS60201LT1G

 

Биполярный транзистор NSS60201LT1G - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: NSS60201LT1G
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.54 W
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
   Макcимальный постоянный ток коллектора (Ic): 4 A
   Статический коэффициент передачи тока (hfe): 150
   Корпус транзистора: SOT23

 Аналоги (замена) для NSS60201LT1G

 

 

NSS60201LT1G Datasheet (PDF)

 ..1. Size:127K  onsemi
nss60201lt1g.pdf

NSS60201LT1G
NSS60201LT1G

NSS60201LT1G60 V, 4.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesewww.onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is important.

 6.1. Size:206K  onsemi
nss60201smt.pdf

NSS60201LT1G
NSS60201LT1G

DATA SHEETwww.onsemi.comLow VCE(sat) NPN Transistor 60 Volt, 2 AmpNPN Low VCE(sat) Transistor60 V, 2 AMARKINGNSS60201SMTDIAGRAMonsemis e2PowerEdge family of low VCE(sat) transistors are1 6WDFN6miniature surface mount devices featuring ultra low saturation voltage AQ MG2 5CASE 506ANG(VCE(sat)) and high current gain capability. These are designed for use3 41

 7.1. Size:249K  onsemi
nss60200dmt.pdf

NSS60201LT1G
NSS60201LT1G

DATA SHEETwww.onsemi.comLow VCE(sat) PNP Transistors 60 Volt, 2 AmpPNP Low VCE(sat) Transistors60 V, 2 AMARKINGNSS60200DMTDIAGRAMonsemis e2PowerEdge family of low VCE(sat) transistors are1miniature surface mount devices featuring ultra low saturation voltageWDFN6AD M(VCE(sat)) and high current gain capability. These are designed for use CASE 506ANin low voltage, h

 7.2. Size:148K  onsemi
nss60200l.pdf

NSS60201LT1G
NSS60201LT1G

NSS60200L60 V, 4.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesewww.onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is important.-

 7.3. Size:127K  onsemi
nss60200l-d.pdf

NSS60201LT1G
NSS60201LT1G

NSS60200LT1G60 V, 4.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is importa

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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