Справочник транзисторов. NSS60201LT1G

 

Биполярный транзистор NSS60201LT1G - описание производителя. Основные параметры. Даташиты.

Наименование производителя: NSS60201LT1G

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 0.54 W

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V

Макcимальный постоянный ток коллектора (Ic): 4 A

Статический коэффициент передачи тока (hfe): 150

Корпус транзистора: SOT23

Аналоги (замена) для NSS60201LT1G

 

 

NSS60201LT1G Datasheet (PDF)

7.1. nss60200l-d.pdf Size:127K _onsemi

NSS60201LT1G
NSS60201LT1G

NSS60200LT1G60 V, 4.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is importa

9.1. nss60100dmt.pdf Size:116K _onsemi

NSS60201LT1G
NSS60201LT1G

NSS60100DMT60 V, 1 A, Low VCE(sat) PNPTransistorsON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesewww.onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is important.

9.2. nss60600mz4.pdf Size:109K _onsemi

NSS60201LT1G
NSS60201LT1G

NSS60600MZ460 V, 6.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturationvoltage (VCE(sat)) and high current gain capability. These are designedfor use in low voltage, high speed switching applications wherehttp://onsemi.comaffordable efficient energy control is important.Typica

 9.3. nss60601mz4t1g.pdf Size:110K _onsemi

NSS60201LT1G
NSS60201LT1G

NSS60601MZ4,NSV60601MZ4T1G,NSV60601MZ4T3G60 V, 6.0 A, Low VCE(sat)NPN Transistorhttp://onsemi.comON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturation60 VOLTS, 6.0 AMPSvoltage (VCE(sat)) and high current gain capability. These are designed2.0 WATTSfor use in low voltage, high speed switching applications

9.4. nss60101dmt.pdf Size:109K _onsemi

NSS60201LT1G
NSS60201LT1G

NSS60101DMT60 V, 1 A, Low VCE(sat) NPNTransistorsON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesewww.onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is important.

 9.5. nss60601mz4-d.pdf Size:107K _onsemi

NSS60201LT1G
NSS60201LT1G

NSS60601MZ460 V, 6.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturationvoltage (VCE(sat)) and high current gain capability. These are designedfor use in low voltage, high speed switching applications wherehttp://onsemi.comaffordable efficient energy control is important.Typica

9.6. nss60600mz4t1g.pdf Size:132K _onsemi

NSS60201LT1G
NSS60201LT1G

NSS60600MZ4,NSV60600MZ4T1G,NSV60600MZ4T3G60 V, 6.0 A, Low VCE(sat)PNP Transistorhttp://onsemi.comON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturation-60 VOLTS, 6.0 AMPSvoltage (VCE(sat)) and high current gain capability. These are designed2.0 WATTSfor use in low voltage, high speed switching application

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