NSS60201LT1G Todos los transistores

 

NSS60201LT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NSS60201LT1G
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.54 W
   Tensión colector-emisor (Vce): 60 V
   Corriente del colector DC máxima (Ic): 4 A

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 150
   Paquete / Cubierta: SOT23
 

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NSS60201LT1G Datasheet (PDF)

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NSS60201LT1G

NSS60201LT1G60 V, 4.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesewww.onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is important.

 6.1. Size:206K  onsemi
nss60201smt.pdf pdf_icon

NSS60201LT1G

DATA SHEETwww.onsemi.comLow VCE(sat) NPN Transistor 60 Volt, 2 AmpNPN Low VCE(sat) Transistor60 V, 2 AMARKINGNSS60201SMTDIAGRAMonsemis e2PowerEdge family of low VCE(sat) transistors are1 6WDFN6miniature surface mount devices featuring ultra low saturation voltage AQ MG2 5CASE 506ANG(VCE(sat)) and high current gain capability. These are designed for use3 41

 7.1. Size:249K  onsemi
nss60200dmt.pdf pdf_icon

NSS60201LT1G

DATA SHEETwww.onsemi.comLow VCE(sat) PNP Transistors 60 Volt, 2 AmpPNP Low VCE(sat) Transistors60 V, 2 AMARKINGNSS60200DMTDIAGRAMonsemis e2PowerEdge family of low VCE(sat) transistors are1miniature surface mount devices featuring ultra low saturation voltageWDFN6AD M(VCE(sat)) and high current gain capability. These are designed for use CASE 506ANin low voltage, h

 7.2. Size:148K  onsemi
nss60200l.pdf pdf_icon

NSS60201LT1G

NSS60200L60 V, 4.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesewww.onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is important.-

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SC4793 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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