NST3904DXV6 datasheet, аналоги, основные параметры

Наименование производителя: NST3904DXV6  📄📄 

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.357 W

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V

Макcимальный постоянный ток коллектора (Ic): 0.2 A

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 300 MHz

Статический коэффициент передачи тока (hFE): 100

Корпус транзистора: SOT563

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 Аналоги (замена) для NST3904DXV6

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NST3904DXV6 даташит

 0.1. Size:208K  onsemi
 nst3904dxv6t1g nsvt3904dxv6t1g nst3904dxv6t5g.pdf pdf_icon

NST3904DXV6

Dual General Purpose Transistor NST3904DXV6T1G, NSVT3904DXV6T1G, NST3904DXV6T5G www.onsemi.com The NST/NSV3904DXV6 device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-563 (3) (2) (1) six-leaded surface mount package. By putting two discrete devices in one package, this device is ide

 0.2. Size:99K  onsemi
 nst3904dxv6t1-5.pdf pdf_icon

NST3904DXV6

NST3904DXV6T1, NST3904DXV6T5 Dual General Purpose Transistor The NST3904DXV6T1 device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general http //onsemi.com purpose amplifier applications and is housed in the SOT-563 six-leaded surface mount package. By putting two discrete devices in (3) (2) (1) one package, this device is ideal for low-power su

 0.3. Size:174K  onsemi
 nst3904dxv6t.pdf pdf_icon

NST3904DXV6

NST3904DXV6T1, NSVT3904DXV6T1, NST3904DXV6T5, SNST3904DXV6T5 Dual General Purpose http //onsemi.com Transistor The NST3904DXV6T1 device is a spin-off of our popular (3) (2) (1) SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-563 six-leaded surface mount package. By putting two discrete devices in Q1 Q2 one packag

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