Биполярный транзистор NST847BDP6
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: NST847BDP6
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.42
W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45
V
Макcимальный постоянный ток коллектора (Ic): 0.1
A
Граничная частота коэффициента передачи тока (ft): 100
MHz
Статический коэффициент передачи тока (hfe): 200
Корпус транзистора:
SOT-963
Аналоги (замена) для NST847BDP6
NST847BDP6
Datasheet (PDF)
..1. Size:93K onsemi
nst847bdp6.pdf 
NST847BDP6T5GDual General PurposeTransistorThe NST847BDP6T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563 three-leaded device. It is designed forgeneral purpose amplifier applications and is housed in the SOT-963six-leaded surface mount package. By putting two discrete devices inone package, this device is ideal for low-power surface mounthttp://onsemi.comapplicat
0.1. Size:121K onsemi
nst847bdp6t5g.pdf 
NST847BDP6T5GDual General PurposeTransistorThe NST847BDP6T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563 three-leaded device. It is designed forgeneral purpose amplifier applications and is housed in the SOT-963six-leaded surface mount package. By putting two discrete devices inone package, this device is ideal for low-power surface mount www.onsemi.comapplications
7.1. Size:101K onsemi
nst847bpdp6.pdf 
NST847BPDP6T5GDual ComplementaryGeneral Purpose TransistorThe NST847BPDP6T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563 three-leaded device. It is designed forgeneral purpose amplifier applications and is housed in the SOT-963six-leaded surface mount package. By putting two discrete devices inhttp://onsemi.comone package, this device is ideal for low-power surface
7.2. Size:153K onsemi
nst846bmx2 nst847amx2 nst847bmx2.pdf 
DATA SHEETwww.onsemi.comCOLLECTORGeneral Purpose3Transistors1BASENPN Silicon2NST846BMX2,EMITTERNST847AMX2,NST847BMX2 3Features1 Moisture Sensitivity Level: 12 ESD Rating - Human Body Model: > 4000 VX2DFN3 (1.0x0.6)ESD Rating - Machine Model: > 350 VCASE 714AC These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantMAXIMUM RA
7.3. Size:89K onsemi
nst847bf3.pdf 
NST847BF3T5GNPN General PurposeTransistorThe NST847BF3T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. It isdesigned for general purpose amplifier applications and is housed inhttp://onsemi.comthe SOT-1123 surface mount package. This device is ideal forlow-power surface mount applications where board space is at aCOLLECTORpremium.3
7.4. Size:154K onsemi
nst847bf3t5g.pdf 
NST847BF3T5GNPN General PurposeTransistorThe NST847BF3T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. It isdesigned for general purpose amplifier applications and is housed inhttp://onsemi.comthe SOT-1123 surface mount package. This device is ideal forlow-power surface mount applications where board space is at aCOLLECTORpremium.3
7.5. Size:192K onsemi
nst847bpdp6t5g.pdf 
NST847BPDP6T5GDual ComplementaryGeneral Purpose TransistorThe NST847BPDP6T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563 three-leaded device. It is designed forgeneral purpose amplifier applications and is housed in the SOT-963six-leaded surface mount package. By putting two discrete devices inwww.onsemi.comone package, this device is ideal for low-power surface mo
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